Quantum transport simulation of experimentally fabricated nano-FinFET

Hasanur R. Khan, Denis Mamaluy, Dragica Vasileska

Research output: Contribution to journalArticle

44 Scopus citations

Abstract

We have utilized the contact-block-reduction (CBR) method, which we extended to allow a charge self-consistent scheme, to simulate experimentally fabricated 10-nm-FinFET device. The self-consistent CBR simulator has been modified to simulate devices with channels along arbitrary crystallographic orientation. A series of fully quantum-mechanical transport simulations has been performed. First, the fin extension length and doping profile have been calibrated to match the experimental data. The process control window for the threshold voltage as a function of fin extension has been extracted for the considered device. Then, a set of transfer characteristics and gate leakage currents have been calculated for different drain voltages. The simulation results have been found to be in good agreement with the experimental data in the subthreshold regime. The device turn-off and turn-on behavior has been examined for different fin widths: 12 (experimental), 10, 8, and 6 nm. Finally, the subthreshold slope degradation at high temperatures has been studied.

Original languageEnglish (US)
Pages (from-to)784-796
Number of pages13
JournalIEEE Transactions on Electron Devices
Volume54
Issue number4
DOIs
StatePublished - Apr 1 2007

Keywords

  • Contact-block-reduction (CBR) method
  • FinFET
  • Gate leakage
  • Quantum transport

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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