Quantum potential approach to modeling nanoscale MOSFETs

Shaikh S. Ahmed, Dragica Vasileska, Clemens Heitzinger, Christian Ringhofer

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We propose a novel parameter-free quantum potential scheme for use in conjunction with particle-based simulations. The method is based on a perturbation theory around thermodynamic equilibrium and leads to an effective potential scheme in which the size of the electron depends upon its energy. The approach has been tested on the example of a MOS-capacitor by retrieving the correct sheet electron density. It has also been used in simulations of a 25 nm n-channel nanoscale MOSFET with high substrate doping density. We find that the use of the quantum potential approach gives rise to a threshold voltage shift of about 220 mV and drain current degradation of about 30%.

Original languageEnglish (US)
Pages (from-to)57-61
Number of pages5
JournalJournal of Computational Electronics
Volume4
Issue number1-2
DOIs
StatePublished - Apr 2005

Fingerprint

MOS capacitors
MOSFET
Drain current
Threshold voltage
Carrier concentration
field effect transistors
Doping (additives)
Thermodynamics
Electron
Degradation
Thermodynamic Equilibrium
Electrons
Effective Potential
Substrates
Capacitor
Modeling
Perturbation Theory
Simulation
Voltage
Substrate

Keywords

  • Monte Carlo simulations
  • Nanoscale MOSFETs
  • Quantum potential
  • SOI devices

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

Cite this

Quantum potential approach to modeling nanoscale MOSFETs. / Ahmed, Shaikh S.; Vasileska, Dragica; Heitzinger, Clemens; Ringhofer, Christian.

In: Journal of Computational Electronics, Vol. 4, No. 1-2, 04.2005, p. 57-61.

Research output: Contribution to journalArticle

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