Quantum potential approach to modeling nano-MOSFETs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A parameter-free effective potential scheme for use in conjunction with partilce-based simulations, was presented. The method is based on perturbation theory around thermodynamic equilibrium and leads to a quantum potential, which depends on the energy and wavevector of each individual electron. The approach, with both the barrier and Hartree potential corrections, has been applied to modeling transport in a nano-scaleMOSFET with gate length of 25 nm. It is observed that quantization, accompanied in the processing, results to an increase in the threshold voltage and on-state current reduction of about 20%.

Original languageEnglish (US)
Title of host publication2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts
Pages213-214
Number of pages2
StatePublished - 2004
Event2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts - West Lafayette, IN, United States
Duration: Oct 24 2004Oct 27 2004

Other

Other2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts
CountryUnited States
CityWest Lafayette, IN
Period10/24/0410/27/04

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Threshold voltage
Thermodynamics
Electrons
Processing

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ahmed, S. S., Ringhofer, C., & Vasileska, D. (2004). Quantum potential approach to modeling nano-MOSFETs. In 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts (pp. 213-214)

Quantum potential approach to modeling nano-MOSFETs. / Ahmed, Shaikh S.; Ringhofer, Christian; Vasileska, Dragica.

2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts. 2004. p. 213-214.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ahmed, SS, Ringhofer, C & Vasileska, D 2004, Quantum potential approach to modeling nano-MOSFETs. in 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts. pp. 213-214, 2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts, West Lafayette, IN, United States, 10/24/04.
Ahmed SS, Ringhofer C, Vasileska D. Quantum potential approach to modeling nano-MOSFETs. In 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts. 2004. p. 213-214
Ahmed, Shaikh S. ; Ringhofer, Christian ; Vasileska, Dragica. / Quantum potential approach to modeling nano-MOSFETs. 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts. 2004. pp. 213-214
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