Quantum modelling of particle-particle interactions in SOI MOSFETs

S. M. Ramey, D. K. Ferry

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

A method is presented for treating particle-particle interactions that can be used within Monte Carlo simulations that include quantum potential corrections to the classical potential profile. We use the effective potential method to treat the quantum confinement effects, along with a new molecular dynamics implementation to treat short-range particle interactions. We demonstrate the need for including electron-electron interactions to properly examine energy relaxation of hot electrons in the drain. We also demonstrate the influence of discrete dopants on the uniformity of current flow in ultra-thin SOI nMOSFETs.

Original languageEnglish (US)
Pages (from-to)S238-S240
JournalSemiconductor Science and Technology
Volume19
Issue number4 SPEC. ISS.
DOIs
StatePublished - Apr 1 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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