Quantum modelling of particle-particle interactions in SOI MOSFETs

S. M. Ramey, D. K. Ferry

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A method is presented for treating particle-particle interactions that can be used within Monte Carlo simulations that include quantum potential corrections to the classical potential profile. We use the effective potential method to treat the quantum confinement effects, along with a new molecular dynamics implementation to treat short-range particle interactions. We demonstrate the need for including electron-electron interactions to properly examine energy relaxation of hot electrons in the drain. We also demonstrate the influence of discrete dopants on the uniformity of current flow in ultra-thin SOI nMOSFETs.

Original languageEnglish (US)
JournalSemiconductor Science and Technology
Volume19
Issue number4 SPEC. ISS.
DOIs
StatePublished - Apr 2004

Fingerprint

Particle interactions
SOI (semiconductors)
particle interactions
field effect transistors
Electron-electron interactions
Quantum confinement
Hot electrons
Molecular dynamics
Doping (additives)
hot electrons
electron scattering
molecular dynamics
profiles
electrons
simulation
energy
Monte Carlo simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Quantum modelling of particle-particle interactions in SOI MOSFETs. / Ramey, S. M.; Ferry, D. K.

In: Semiconductor Science and Technology, Vol. 19, No. 4 SPEC. ISS., 04.2004.

Research output: Contribution to journalArticle

Ramey, S. M. ; Ferry, D. K. / Quantum modelling of particle-particle interactions in SOI MOSFETs. In: Semiconductor Science and Technology. 2004 ; Vol. 19, No. 4 SPEC. ISS.
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