Quantum-interference characteristics of a 25 nm trench-type InGaAs/InAlAs quantum-wire field-effect transistor

T. Sugaya, J. P. Bird, M. Ogura, Y. Sugiyama, D. K. Ferry, K. Y. Jang

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

We study the quantum-interference characteristics of a 25 nm, trench-type, InGaAs quantum-wire field-effect transistor realized by selective epitaxy, and find very different behavior from that typically exhibited by disordered wires. The amplitude of the magnetoresistance fluctuations is exponentially suppressed at high fields, where evidence of an Aharonov-Bohm effect is observed. The exponential suppression appears to be consistent with theoretical predictions for the influence of magnetic field on the scattering rate in clean wires, while the Aharonov-Bohm effect points to an interference process in which the one-dimensional subbands of the wire themselves constitute well-resolved paths for electron interference.

Original languageEnglish (US)
Pages (from-to)434-436
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number3
DOIs
StatePublished - Jan 21 2002

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quantum wires
field effect transistors
wire
interference
epitaxy
retarding
predictions
scattering
magnetic fields
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Quantum-interference characteristics of a 25 nm trench-type InGaAs/InAlAs quantum-wire field-effect transistor. / Sugaya, T.; Bird, J. P.; Ogura, M.; Sugiyama, Y.; Ferry, D. K.; Jang, K. Y.

In: Applied Physics Letters, Vol. 80, No. 3, 21.01.2002, p. 434-436.

Research output: Contribution to journalArticle

Sugaya, T. ; Bird, J. P. ; Ogura, M. ; Sugiyama, Y. ; Ferry, D. K. ; Jang, K. Y. / Quantum-interference characteristics of a 25 nm trench-type InGaAs/InAlAs quantum-wire field-effect transistor. In: Applied Physics Letters. 2002 ; Vol. 80, No. 3. pp. 434-436.
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