Quantum-interference characteristics of a 25 nm trench-type InGaAs/InAlAs quantum-wire field-effect transistor

T. Sugaya; J. P. Bird; M. Ogura; Y. Sugiyama; D. K. Ferry; K. Y. Jang

doi:10.1063/1.1434304

Quantum-interference characteristics of a 25 nm trench-type InGaAs/InAlAs quantum-wire field-effect transistor

T. Sugaya, J. P. Bird, M. Ogura, Y. Sugiyama, D. K. Ferry, K. Y. Jang

Research output: Contribution to journal › Article › peer-review

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Abstract

We study the quantum-interference characteristics of a 25 nm, trench-type, InGaAs quantum-wire field-effect transistor realized by selective epitaxy, and find very different behavior from that typically exhibited by disordered wires. The amplitude of the magnetoresistance fluctuations is exponentially suppressed at high fields, where evidence of an Aharonov-Bohm effect is observed. The exponential suppression appears to be consistent with theoretical predictions for the influence of magnetic field on the scattering rate in clean wires, while the Aharonov-Bohm effect points to an interference process in which the one-dimensional subbands of the wire themselves constitute well-resolved paths for electron interference.

Original language	English (US)
Pages (from-to)	434-436
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	3
DOIs	https://doi.org/10.1063/1.1434304
State	Published - Jan 21 2002

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We study the quantum-interference characteristics of a 25 nm, trench-type, InGaAs quantum-wire field-effect transistor realized by selective epitaxy, and find very different behavior from that typically exhibited by disordered wires. The amplitude of the magnetoresistance fluctuations is exponentially suppressed at high fields, where evidence of an Aharonov-Bohm effect is observed. The exponential suppression appears to be consistent with theoretical predictions for the influence of magnetic field on the scattering rate in clean wires, while the Aharonov-Bohm effect points to an interference process in which the one-dimensional subbands of the wire themselves constitute well-resolved paths for electron interference.",

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AU - Sugaya, T.

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AU - Ogura, M.

AU - Sugiyama, Y.

AU - Ferry, D. K.

AU - Jang, K. Y.

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N2 - We study the quantum-interference characteristics of a 25 nm, trench-type, InGaAs quantum-wire field-effect transistor realized by selective epitaxy, and find very different behavior from that typically exhibited by disordered wires. The amplitude of the magnetoresistance fluctuations is exponentially suppressed at high fields, where evidence of an Aharonov-Bohm effect is observed. The exponential suppression appears to be consistent with theoretical predictions for the influence of magnetic field on the scattering rate in clean wires, while the Aharonov-Bohm effect points to an interference process in which the one-dimensional subbands of the wire themselves constitute well-resolved paths for electron interference.

AB - We study the quantum-interference characteristics of a 25 nm, trench-type, InGaAs quantum-wire field-effect transistor realized by selective epitaxy, and find very different behavior from that typically exhibited by disordered wires. The amplitude of the magnetoresistance fluctuations is exponentially suppressed at high fields, where evidence of an Aharonov-Bohm effect is observed. The exponential suppression appears to be consistent with theoretical predictions for the influence of magnetic field on the scattering rate in clean wires, while the Aharonov-Bohm effect points to an interference process in which the one-dimensional subbands of the wire themselves constitute well-resolved paths for electron interference.

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Quantum-interference characteristics of a 25 nm trench-type InGaAs/InAlAs quantum-wire field-effect transistor

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