QUANTUM INTERFERENCE AND DIMENSIONALITY IN SEMICONDUCTOR STRUCTURES.

D. J. Newson, M. Pepper, Trevor Thornton

Research output: Chapter in Book/Report/Conference proceedingChapter

4 Scopus citations

Abstract

A summary is given of recent work on the 3-2 and 2-1 dimensional transitions in semiconductor structures. The 3-2 dimensional effects were investigated using GaAs Schottky gate FETs. It is shown that, by the application of a parallel magnetic field, 2D quantum interference can be converted into 3D behavior giving good agreement with theory predicting universal behavior. We also present results on a new regime which is of 'intermediate dimensionality' produced by a parallel field that is too small to produce 3D behavior. It is also shown that both transverse and parallel magnetic field measurements give similar values for the inelastic diffusion length. Results are also presented on the positive magnetoconductance exhibited by a narrow 2D electron gas in a GaAs-AlGaAs heterojunction.

Original languageEnglish (US)
Title of host publicationPhilosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties
Pages775-784
Number of pages10
Volume56
Edition6
StatePublished - Dec 1987
Externally publishedYes
EventSecond Bar-Ilan Conf on the Phys of Disordered Syst - Ramat-Gan, Isr
Duration: Jan 5 1987Jan 7 1987

Other

OtherSecond Bar-Ilan Conf on the Phys of Disordered Syst
CityRamat-Gan, Isr
Period1/5/871/7/87

ASJC Scopus subject areas

  • Engineering(all)

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    Newson, D. J., Pepper, M., & Thornton, T. (1987). QUANTUM INTERFERENCE AND DIMENSIONALITY IN SEMICONDUCTOR STRUCTURES. In Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties (6 ed., Vol. 56, pp. 775-784)