Abstract
A summary is given of recent work on the 3-2 and 2-1 dimensional transitions in semiconductor structures. The 3-2 dimensional effects were investigated using GaAs Schottky gate FETs. It is shown that, by the application of a parallel magnetic field, 2D quantum interference can be converted into 3D behavior giving good agreement with theory predicting universal behavior. We also present results on a new regime which is of 'intermediate dimensionality' produced by a parallel field that is too small to produce 3D behavior. It is also shown that both transverse and parallel magnetic field measurements give similar values for the inelastic diffusion length. Results are also presented on the positive magnetoconductance exhibited by a narrow 2D electron gas in a GaAs-AlGaAs heterojunction.
| Original language | English (US) |
|---|---|
| Title of host publication | Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties |
| Pages | 775-784 |
| Number of pages | 10 |
| Volume | 56 |
| Edition | 6 |
| State | Published - Dec 1987 |
| Externally published | Yes |
| Event | Second Bar-Ilan Conf on the Phys of Disordered Syst - Ramat-Gan, Isr Duration: Jan 5 1987 → Jan 7 1987 |
Other
| Other | Second Bar-Ilan Conf on the Phys of Disordered Syst |
|---|---|
| City | Ramat-Gan, Isr |
| Period | 1/5/87 → 1/7/87 |
ASJC Scopus subject areas
- General Engineering