Quantum hydrodynamic simulation of hysteresis in the resonant tunneling diode at 300 K

The smooth quantum hydrodynamic model is an extension of the classical hydrodynamic model for semiconductor devices that can handle in a mathematically rigorous way the discontinuities in the potential energy that occur at heterojunction barriers in quantum semiconductor devices. Smooth quantum hydrodynamic model simulations of a GaAs resonant tunneling diode at 300 K with a 5-nm quantum well and 2.5-nm 280 meV double quantum barriers are presented that successfully produce realistic negative differential resistance and hysteresis in the current–voltage curve. This is the first quantum hydrodynamic simulation of hysteresis in the resonant tunneling diode at 300 K, demonstrating that fluid dynamical concepts can model this fundamental quantum mechanical effect even at room temperature. A dispersive quantum term ħ²nu_xxx/ (8 m) in the energy transport equation, where n is the electron density, u is the electron velocity, and m is the effective electron mass, is essential here in obtaining a realistic hysteresis loop in the current–voltage curve.