Quantum hydrodynamic model for semiconductor devices

Research output: Contribution to journalArticlepeer-review

422 Scopus citations

Abstract

Simulations of a resonant tunneling diode are presented that show charge buildup in the quantum well and negative differential resistance (NDR) in the current-voltage curve. These are the first simulations of the full QHD equations to show NDR in the resonant tunneling diode. The computed current-voltage curve agrees quantitatively with experimental measurements. NDR is interpreted in terms of the time spent by electrons in the quantum well.

Original languageEnglish (US)
Pages (from-to)409-427
Number of pages19
JournalSIAM Journal on Applied Mathematics
Volume54
Issue number2
DOIs
StatePublished - 1994
Externally publishedYes

ASJC Scopus subject areas

  • Applied Mathematics

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