Abstract
Simulations of a resonant tunneling diode are presented that show charge buildup in the quantum well and negative differential resistance (NDR) in the current-voltage curve. These are the first simulations of the full QHD equations to show NDR in the resonant tunneling diode. The computed current-voltage curve agrees quantitatively with experimental measurements. NDR is interpreted in terms of the time spent by electrons in the quantum well.
Original language | English (US) |
---|---|
Pages (from-to) | 409-427 |
Number of pages | 19 |
Journal | SIAM Journal on Applied Mathematics |
Volume | 54 |
Issue number | 2 |
DOIs | |
State | Published - 1994 |
Externally published | Yes |
ASJC Scopus subject areas
- Applied Mathematics