Abstract
The non-equilibrium statistical operator (NESO) method is used to study the time evolution of crystal electrons of high concentration under the influence of an external electric field. This field may be both space- and time-dependent as is typically the case in semiconductor devices. As this approach has been discussed frequently in recent literature, we only review it as briefly as necessary.
| Original language | English (US) |
|---|---|
| Title of host publication | Unknown Host Publication Title |
| Editors | James D. Chadi, Walter A. Harrison |
| Publisher | Springer Verlag |
| Pages | 1329-1332 |
| Number of pages | 4 |
| ISBN (Print) | 0387961089 |
| State | Published - Dec 1 1985 |
ASJC Scopus subject areas
- Engineering(all)