Quantum fluctuations in the low temperature magneto-resistance of bi-layer graphene

Y. Ochiai; S. Motooka; Y. Ujiie; N. Aoki; J. P. Bird; D. K. Ferry

doi:10.1088/1742-6596/245/1/012029

Quantum fluctuations in the low temperature magneto-resistance of bi-layer graphene

Y. Ochiai, S. Motooka, Y. Ujiie, N. Aoki, J. P. Bird, D. K. Ferry

Research output: Contribution to journal › Article › peer-review

Abstract

We report here the observation of quasi-periodic conductance fluctuations in the low temperature magneto-resistance of gated bi-layer (BL) field-effect transistors (FETs). Both correlation field analysis and conductance fluctuation behaviour suggests that the quantum transport in the BL-FETs closely resembles that in conventional semiconductor open quantum dots.

Original language	English (US)
Article number	012029
Journal	Journal of Physics: Conference Series
Volume	244
DOIs	https://doi.org/10.1088/1742-6596/245/1/012029
State	Published - 2010

ASJC Scopus subject areas

General Physics and Astronomy

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10.1088/1742-6596/245/1/012029

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title = "Quantum fluctuations in the low temperature magneto-resistance of bi-layer graphene",

abstract = "We report here the observation of quasi-periodic conductance fluctuations in the low temperature magneto-resistance of gated bi-layer (BL) field-effect transistors (FETs). Both correlation field analysis and conductance fluctuation behaviour suggests that the quantum transport in the BL-FETs closely resembles that in conventional semiconductor open quantum dots.",

author = "Y. Ochiai and S. Motooka and Y. Ujiie and N. Aoki and Bird, {J. P.} and Ferry, {D. K.}",

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AU - Motooka, S.

AU - Ujiie, Y.

AU - Aoki, N.

AU - Bird, J. P.

AU - Ferry, D. K.

PY - 2010

Y1 - 2010

N2 - We report here the observation of quasi-periodic conductance fluctuations in the low temperature magneto-resistance of gated bi-layer (BL) field-effect transistors (FETs). Both correlation field analysis and conductance fluctuation behaviour suggests that the quantum transport in the BL-FETs closely resembles that in conventional semiconductor open quantum dots.

AB - We report here the observation of quasi-periodic conductance fluctuations in the low temperature magneto-resistance of gated bi-layer (BL) field-effect transistors (FETs). Both correlation field analysis and conductance fluctuation behaviour suggests that the quantum transport in the BL-FETs closely resembles that in conventional semiconductor open quantum dots.

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DO - 10.1088/1742-6596/245/1/012029

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VL - 244

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

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ER -

Quantum fluctuations in the low temperature magneto-resistance of bi-layer graphene

Abstract

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