Quantum fluctuations in the low temperature magneto-resistance of bi-layer graphene

Y. Ochiai, S. Motooka, Y. Ujiie, N. Aoki, J. P. Bird, D. K. Ferry

Research output: Contribution to journalArticlepeer-review

Abstract

We report here the observation of quasi-periodic conductance fluctuations in the low temperature magneto-resistance of gated bi-layer (BL) field-effect transistors (FETs). Both correlation field analysis and conductance fluctuation behaviour suggests that the quantum transport in the BL-FETs closely resembles that in conventional semiconductor open quantum dots.

Original languageEnglish (US)
Article number012029
JournalJournal of Physics: Conference Series
Volume244
DOIs
StatePublished - Jan 1 2010

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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