We report here the observation of quasi-periodic conductance fluctuations in the low temperature magneto-resistance of gated bi-layer (BL) field-effect transistors (FETs). Both correlation field analysis and conductance fluctuation behaviour suggests that the quantum transport in the BL-FETs closely resembles that in conventional semiconductor open quantum dots.
|Original language||English (US)|
|Journal||Journal of Physics: Conference Series|
|State||Published - 2010|
ASJC Scopus subject areas
- Physics and Astronomy(all)