3 Citations (Scopus)

Abstract

It is known that the potential induced degradation (PID) stress of conventional p-base solar cells affects power, shunt resistance, junction recombination, and quantum efficiency (QE). One of the primary solutions to address the PID issue is a modification of chemical and physical properties of antireflection coating (ARC) on the cell surface. Depending on the edge isolation method used during cell processing, the ARC layer near the edges may be uniformly or non-uniformly damaged. Therefore, the pathway for sodium migration from glass to the cell junction could be either through all of the ARC surface if surface and edge ARC have low quality or through the cell edge if surface ARC has high quality but edge ARC is defective due to certain edge isolation process. In this study, two PID susceptible cells from two different manufacturers have been investigated. The QE measurements of these cells before and after PID stress were performed at both surface and edge. We observed the wavelength dependent QE loss only in the first manufacturer's cell but not in the second manufacturer's cell. The first manufacturer's cell appeared to have low quality ARC whereas the second manufacturer's cell appeared to have high quality ARC with defective edge. To rapidly screen a large number of cells for PID stress testing, a new but simple test setup that does not require laminated cell coupon has been developed and is used in this investigation.

Original languageEnglish (US)
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479979448
DOIs
StatePublished - Dec 14 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015Jun 19 2015

Other

Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period6/14/156/19/15

Fingerprint

Antireflection coatings
Quantum efficiency
Degradation
Wavelength
Chemical properties
Solar cells
Physical properties
Sodium
Glass
Testing
Processing

Keywords

  • durability
  • edge isolation
  • photovoltaic cells
  • PID
  • quantum efficiency
  • shunting

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Oh, J., Bowden, S., Tamizhmani, G., & Hacke, P. (2015). Quantum efficiency loss after PID stress: Wavelength dependence on cell surface and cell edge. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7355629] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7355629

Quantum efficiency loss after PID stress : Wavelength dependence on cell surface and cell edge. / Oh, Jaewon; Bowden, Stuart; Tamizhmani, Govindasamy; Hacke, Peter.

2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7355629.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Oh, J, Bowden, S, Tamizhmani, G & Hacke, P 2015, Quantum efficiency loss after PID stress: Wavelength dependence on cell surface and cell edge. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7355629, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 6/14/15. https://doi.org/10.1109/PVSC.2015.7355629
Oh J, Bowden S, Tamizhmani G, Hacke P. Quantum efficiency loss after PID stress: Wavelength dependence on cell surface and cell edge. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7355629 https://doi.org/10.1109/PVSC.2015.7355629
Oh, Jaewon ; Bowden, Stuart ; Tamizhmani, Govindasamy ; Hacke, Peter. / Quantum efficiency loss after PID stress : Wavelength dependence on cell surface and cell edge. 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015.
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