Quantum effects in SOI devices

Shaikh S. Ahmed, Richard Akis, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Quantum effects have been reported to play an important role in the operation of narrow width SOI devices, in which the carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide interface. This results not only in a significant increase in the I threshold voltage but also in its pronounced channel width dependency. Typical method to simulate these effects is a simultaneous solution of the Schrödinger and Poisson equations, which can be a very time consuming procedure. An alternative way is to use the recently developed effective potential approach that takes into account the natural non-zero size of an electron wave packet in the quantized system. In this work, we have applied the effective potential approach in a recently proposed SOI device structure to quantify these effects. In a second effort we utilize the Landauer's formalism to calculate the on-state current quantum mechanically and estimate the increase in device threshold voltage due to the lateral quantization.

Original languageEnglish (US)
Title of host publication2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002
EditorsM. Laudon, B. Romanowicz
Pages221-224
Number of pages4
StatePublished - 2002
Event2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002 - San Juan, Puerto Rico
Duration: Apr 21 2002Apr 25 2002

Other

Other2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002
CountryPuerto Rico
CitySan Juan
Period4/21/024/25/02

Fingerprint

Threshold voltage
Plasma confinement
Wave packets
Poisson equation
Semiconductor quantum wells
Electrons
Oxide semiconductors

Keywords

  • Effective potential
  • Landauer's formalism
  • Narrow channel effect
  • SOI devices

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ahmed, S. S., Akis, R., & Vasileska, D. (2002). Quantum effects in SOI devices. In M. Laudon, & B. Romanowicz (Eds.), 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002 (pp. 221-224)

Quantum effects in SOI devices. / Ahmed, Shaikh S.; Akis, Richard; Vasileska, Dragica.

2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002. ed. / M. Laudon; B. Romanowicz. 2002. p. 221-224.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ahmed, SS, Akis, R & Vasileska, D 2002, Quantum effects in SOI devices. in M Laudon & B Romanowicz (eds), 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002. pp. 221-224, 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002, San Juan, Puerto Rico, 4/21/02.
Ahmed SS, Akis R, Vasileska D. Quantum effects in SOI devices. In Laudon M, Romanowicz B, editors, 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002. 2002. p. 221-224
Ahmed, Shaikh S. ; Akis, Richard ; Vasileska, Dragica. / Quantum effects in SOI devices. 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002. editor / M. Laudon ; B. Romanowicz. 2002. pp. 221-224
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