Quantum effects in MOSFETs: Use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices

D. K. Ferry, R. Akis, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

111 Scopus citations

Abstract

We incorporate an effective potential in a three-dimensional MOSFET simulation, in which the transport is handled by an ensemble Monte Carlo approach. We find that the threshold voltage is shifted and the carrier density is moved away from the interface, both effects given by quantization provided within the channel. However, the mean velocity of the carriers is not affected significantly by the introduction of this effective potential, and is only reduced by about 10%.

Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting
Pages287-290
Number of pages4
StatePublished - 2000
Event2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
Duration: Dec 10 2000Dec 13 2000

Other

Other2000 IEEE International Electron Devices Meeting
CountryUnited States
CitySan Francisco, CA
Period12/10/0012/13/00

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Ferry, D. K., Akis, R., & Vasileska, D. (2000). Quantum effects in MOSFETs: Use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices. In Technical Digest - International Electron Devices Meeting (pp. 287-290)