Abstract
We incorporate an effective potential in a three-dimensional MOSFET simulation, in which the transport is handled by an ensemble Monte Carlo approach. We find that the threshold voltage is shifted and the carrier density is moved away from the interface, both effects given by quantization provided within the channel. However, the mean velocity of the carriers is not affected significantly by the introduction of this effective potential, and is only reduced by about 10%.
| Original language | English (US) |
|---|---|
| Title of host publication | Technical Digest - International Electron Devices Meeting |
| Pages | 287-290 |
| Number of pages | 4 |
| State | Published - 2000 |
| Event | 2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States Duration: Dec 10 2000 → Dec 13 2000 |
Other
| Other | 2000 IEEE International Electron Devices Meeting |
|---|---|
| Country/Territory | United States |
| City | San Francisco, CA |
| Period | 12/10/00 → 12/13/00 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering