Quantum dots in In.47Ga.53AsInAlAsInP heterostructures

K. Kern, T. Demel, D. Heitmann, P. Grambow, Yong-Hang Zhang, K. Ploog

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Quantum dots with geometrical diameter of about 400 nm have been prepared by deep mesa etching starting from modulation doped InGaAsInAlAsInP heterostructures. From microwave and far infrared (FIR) transmission experiments we find that the dots contain about 600 electrons per dot on discrete quantum confined energy levels with 1 meV separation. The FIR response is strongly governed by collective effects and shows in a magnetic field a complex mode structure.

Original languageEnglish (US)
Pages (from-to)11-14
Number of pages4
JournalSuperlattices and Microstructures
Volume9
Issue number1
DOIs
StatePublished - 1991
Externally publishedYes

Fingerprint

Infrared transmission
mesas
Electron energy levels
Semiconductor quantum dots
Heterojunctions
Etching
energy levels
quantum dots
Microwaves
Modulation
etching
Magnetic fields
Infrared radiation
modulation
microwaves
Electrons
magnetic fields
electrons
Experiments

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Quantum dots in In.47Ga.53AsInAlAsInP heterostructures. / Kern, K.; Demel, T.; Heitmann, D.; Grambow, P.; Zhang, Yong-Hang; Ploog, K.

In: Superlattices and Microstructures, Vol. 9, No. 1, 1991, p. 11-14.

Research output: Contribution to journalArticle

Kern, K. ; Demel, T. ; Heitmann, D. ; Grambow, P. ; Zhang, Yong-Hang ; Ploog, K. / Quantum dots in In.47Ga.53AsInAlAsInP heterostructures. In: Superlattices and Microstructures. 1991 ; Vol. 9, No. 1. pp. 11-14.
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