Quantum dot materials for solar cell applications: Effects of strain-reducing and strain-compensated barriers on dot structural and optical properties

A. Pancholi, Y. C. Zhang, J. Boyle, V. G. Stoleru, M. C. Hanna, A. G. Norman, S. Bremner, C. Honsberg

Research output: Contribution to journalConference article

Abstract

We present structural and optical analysis of (In,Ga)As quantum dot structures with straincompensated and strain-reduced barriers for intermediate band solar cell applications.

Original languageEnglish (US)
JournalOptics InfoBase Conference Papers
StatePublished - Dec 1 2011
Externally publishedYes
EventSolar Energy: New Materials and Nanostructured Devices for High Efficiency, Solar 2008 - Stanford, CA, United States
Duration: Jun 24 2008Jun 25 2008

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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