Quantum corrected full-band cellular Monte Carlo simulation of AlGaN/GaN HEMTs

Shinya Yamakawa; Stephen Goodnick; Shela Aboud; Marco Saraniti

doi:10.1007/s10825-004-7065-6

Quantum corrected full-band cellular Monte Carlo simulation of AlGaN/GaN HEMTs

Shinya Yamakawa, Stephen Goodnick, Shela Aboud, Marco Saraniti

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

A full-band Cellular Monte Carlo (CMC) approach is applied to the simulation of electron transport in AlGaN/GaN HEMTs with quantum corrections included via the effective potential method. The best fit Gaussian parameters of the effective potential method for different Al contents and gate biases are calculated from the equilibrium electron density. The extracted parameters are used for quantum corrections included in the full-band CMC device simulator. The charge set-back from the interface is clearly observed. However, the overall current of the device is close to the classical solution due to the dominance of polarization charge.

Original language	English (US)
Pages (from-to)	299-303
Number of pages	5
Journal	Journal of Computational Electronics
Volume	3
Issue number	3-4
DOIs	https://doi.org/10.1007/s10825-004-7065-6
State	Published - Oct 2004

Keywords

AlGaN/GaN HEMT
Cellular Monte Carlo
Effective potential
Quantum correction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Modeling and Simulation
Electrical and Electronic Engineering

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10.1007/s10825-004-7065-6

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title = "Quantum corrected full-band cellular Monte Carlo simulation of AlGaN/GaN HEMTs",

abstract = "A full-band Cellular Monte Carlo (CMC) approach is applied to the simulation of electron transport in AlGaN/GaN HEMTs with quantum corrections included via the effective potential method. The best fit Gaussian parameters of the effective potential method for different Al contents and gate biases are calculated from the equilibrium electron density. The extracted parameters are used for quantum corrections included in the full-band CMC device simulator. The charge set-back from the interface is clearly observed. However, the overall current of the device is close to the classical solution due to the dominance of polarization charge.",

keywords = "AlGaN/GaN HEMT, Cellular Monte Carlo, Effective potential, Quantum correction",

author = "Shinya Yamakawa and Stephen Goodnick and Shela Aboud and Marco Saraniti",

note = "Funding Information: The authors would like to acknowledge the support of the National Science Foundation through the grant number ECS-0115548 as well as the support of the DoD HPCMP.",

year = "2004",

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doi = "10.1007/s10825-004-7065-6",

language = "English (US)",

volume = "3",

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journal = "Journal of Computational Electronics",

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T1 - Quantum corrected full-band cellular Monte Carlo simulation of AlGaN/GaN HEMTs

AU - Yamakawa, Shinya

AU - Goodnick, Stephen

AU - Aboud, Shela

AU - Saraniti, Marco

N1 - Funding Information: The authors would like to acknowledge the support of the National Science Foundation through the grant number ECS-0115548 as well as the support of the DoD HPCMP.

PY - 2004/10

Y1 - 2004/10

N2 - A full-band Cellular Monte Carlo (CMC) approach is applied to the simulation of electron transport in AlGaN/GaN HEMTs with quantum corrections included via the effective potential method. The best fit Gaussian parameters of the effective potential method for different Al contents and gate biases are calculated from the equilibrium electron density. The extracted parameters are used for quantum corrections included in the full-band CMC device simulator. The charge set-back from the interface is clearly observed. However, the overall current of the device is close to the classical solution due to the dominance of polarization charge.

AB - A full-band Cellular Monte Carlo (CMC) approach is applied to the simulation of electron transport in AlGaN/GaN HEMTs with quantum corrections included via the effective potential method. The best fit Gaussian parameters of the effective potential method for different Al contents and gate biases are calculated from the equilibrium electron density. The extracted parameters are used for quantum corrections included in the full-band CMC device simulator. The charge set-back from the interface is clearly observed. However, the overall current of the device is close to the classical solution due to the dominance of polarization charge.

KW - AlGaN/GaN HEMT

KW - Cellular Monte Carlo

KW - Effective potential

KW - Quantum correction

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JF - Journal of Computational Electronics

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ER -

Quantum corrected full-band cellular Monte Carlo simulation of AlGaN/GaN HEMTs

Abstract

Keywords

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