17 Scopus citations

Abstract

A full-band Cellular Monte Carlo (CMC) approach is applied to the simulation of electron transport in AlGaN/GaN HEMTs with quantum corrections included via the effective potential method. The best fit Gaussian parameters of the effective potential method for different Al contents and gate biases are calculated from the equilibrium electron density. The extracted parameters are used for quantum corrections included in the full-band CMC device simulator. The charge set-back from the interface is clearly observed. However, the overall current of the device is close to the classical solution due to the dominance of polarization charge.

Original languageEnglish (US)
Pages (from-to)299-303
Number of pages5
JournalJournal of Computational Electronics
Volume3
Issue number3-4
DOIs
StatePublished - Oct 1 2004

Keywords

  • AlGaN/GaN HEMT
  • Cellular Monte Carlo
  • Effective potential
  • Quantum correction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Quantum corrected full-band cellular Monte Carlo simulation of AlGaN/GaN HEMTs'. Together they form a unique fingerprint.

  • Cite this