Quantized tunneling current in the metallic nanogaps formed by electrodeposition and etching

C. Z. Li, H. X. He, N. J. Tao

Research output: Contribution to journalArticle

107 Scopus citations

Abstract

We have studied electron tunneling across the gap between two electrodes as the gap is varied by electrodeposition and etching. The tunneling current tends to change in a stepwise fashion, corresponding to a discrete change of the gap width. The stepwise change is due to the discrete nature of atoms and a series of structural relaxations of the atoms at the electrodes between stable configurations upon deposition and etching. By stabilizing the tunneling current on various steps using a feedback loop, we have demonstrated that stable molecular-scale gaps can be fabricated with subangstrom precision.

Original languageEnglish (US)
Pages (from-to)3995-3997
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number24
DOIs
StatePublished - Dec 11 2000
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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