Quantized tunneling current in the metallic nanogaps formed by electrodeposition and etching

C. Z. Li, H. X. He, Nongjian Tao

Research output: Contribution to journalArticle

104 Citations (Scopus)

Abstract

We have studied electron tunneling across the gap between two electrodes as the gap is varied by electrodeposition and etching. The tunneling current tends to change in a stepwise fashion, corresponding to a discrete change of the gap width. The stepwise change is due to the discrete nature of atoms and a series of structural relaxations of the atoms at the electrodes between stable configurations upon deposition and etching. By stabilizing the tunneling current on various steps using a feedback loop, we have demonstrated that stable molecular-scale gaps can be fabricated with subangstrom precision.

Original languageEnglish (US)
Pages (from-to)3995-3997
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number24
StatePublished - Dec 11 2000
Externally publishedYes

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electrodeposition
etching
electrodes
electron tunneling
atoms
configurations

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Quantized tunneling current in the metallic nanogaps formed by electrodeposition and etching. / Li, C. Z.; He, H. X.; Tao, Nongjian.

In: Applied Physics Letters, Vol. 77, No. 24, 11.12.2000, p. 3995-3997.

Research output: Contribution to journalArticle

@article{0665135df2ab4fd895f3a1e93085d298,
title = "Quantized tunneling current in the metallic nanogaps formed by electrodeposition and etching",
abstract = "We have studied electron tunneling across the gap between two electrodes as the gap is varied by electrodeposition and etching. The tunneling current tends to change in a stepwise fashion, corresponding to a discrete change of the gap width. The stepwise change is due to the discrete nature of atoms and a series of structural relaxations of the atoms at the electrodes between stable configurations upon deposition and etching. By stabilizing the tunneling current on various steps using a feedback loop, we have demonstrated that stable molecular-scale gaps can be fabricated with subangstrom precision.",
author = "Li, {C. Z.} and He, {H. X.} and Nongjian Tao",
year = "2000",
month = "12",
day = "11",
language = "English (US)",
volume = "77",
pages = "3995--3997",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "24",

}

TY - JOUR

T1 - Quantized tunneling current in the metallic nanogaps formed by electrodeposition and etching

AU - Li, C. Z.

AU - He, H. X.

AU - Tao, Nongjian

PY - 2000/12/11

Y1 - 2000/12/11

N2 - We have studied electron tunneling across the gap between two electrodes as the gap is varied by electrodeposition and etching. The tunneling current tends to change in a stepwise fashion, corresponding to a discrete change of the gap width. The stepwise change is due to the discrete nature of atoms and a series of structural relaxations of the atoms at the electrodes between stable configurations upon deposition and etching. By stabilizing the tunneling current on various steps using a feedback loop, we have demonstrated that stable molecular-scale gaps can be fabricated with subangstrom precision.

AB - We have studied electron tunneling across the gap between two electrodes as the gap is varied by electrodeposition and etching. The tunneling current tends to change in a stepwise fashion, corresponding to a discrete change of the gap width. The stepwise change is due to the discrete nature of atoms and a series of structural relaxations of the atoms at the electrodes between stable configurations upon deposition and etching. By stabilizing the tunneling current on various steps using a feedback loop, we have demonstrated that stable molecular-scale gaps can be fabricated with subangstrom precision.

UR - http://www.scopus.com/inward/record.url?scp=0000386508&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000386508&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0000386508

VL - 77

SP - 3995

EP - 3997

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

ER -