Quantized conductance in an in-plane gated in0.53Ga 0.47As quantum point contact

Andre Beyer; David K. Ferry

Quantized conductance in an in-plane gated in_0.53Ga _0.47As quantum point contact

Andre Beyer, David K. Ferry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report quantized conductance in a 500 nm wide In_0.53Ga _0.47As quantum point contact defined by 100 nm wide trenches. The surrounding two-dimensional electron gas was used as gate. Electron beam lithography and reactive ion etching with BCl₃ formed the trenches. Quantized conductance in steps of 2e²/h as well as one additional step at 0.7(2e²/h) was observed at 4.8 K. Conductance oscillations superimpose the plateaus at 0.3 K. A possible explanation for these resonance structures is a quantum interference of electron waves between the boundaries to the two-dimensional source and drain region.

Original language	English (US)
Title of host publication	2004 4th IEEE Conference on Nanotechnology
Pages	488-490
Number of pages	3
State	Published - 2004
Event	2004 4th IEEE Conference on Nanotechnology - Munich, Germany Duration: Aug 16 2004 → Aug 19 2004

Other

Other	2004 4th IEEE Conference on Nanotechnology
Country	Germany
City	Munich
Period	8/16/04 → 8/19/04

Fingerprint

Two dimensional electron gas

Electron beam lithography

Reactive ion etching

Point contacts

Electrons

Keywords

Gallium compounds
Indium compounds
Nanotechnology
Quantization
Quantum effect semiconductor devices

ASJC Scopus subject areas

Engineering(all)

Cite this

Beyer, A., & Ferry, D. K. (2004). Quantized conductance in an in-plane gated in_0.53Ga _0.47As quantum point contact. In 2004 4th IEEE Conference on Nanotechnology (pp. 488-490)

Quantized conductance in an in-plane gated in_0.53Ga _0.47As quantum point contact. / Beyer, Andre; Ferry, David K.

2004 4th IEEE Conference on Nanotechnology. 2004. p. 488-490.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Beyer, A & Ferry, DK 2004, Quantized conductance in an in-plane gated in_0.53Ga _0.47As quantum point contact. in 2004 4th IEEE Conference on Nanotechnology. pp. 488-490, 2004 4th IEEE Conference on Nanotechnology, Munich, Germany, 8/16/04.

Beyer A, Ferry DK. Quantized conductance in an in-plane gated in_0.53Ga _0.47As quantum point contact. In 2004 4th IEEE Conference on Nanotechnology. 2004. p. 488-490

Beyer, Andre ; Ferry, David K. / Quantized conductance in an in-plane gated in_0.53Ga _0.47As quantum point contact. 2004 4th IEEE Conference on Nanotechnology. 2004. pp. 488-490

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