Quantized conductance in an in-plane gated in0.53Ga 0.47As quantum point contact

Andre Beyer, David K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report quantized conductance in a 500 nm wide In0.53Ga 0.47As quantum point contact defined by 100 nm wide trenches. The surrounding two-dimensional electron gas was used as gate. Electron beam lithography and reactive ion etching with BCl3 formed the trenches. Quantized conductance in steps of 2e2/h as well as one additional step at 0.7(2e2/h) was observed at 4.8 K. Conductance oscillations superimpose the plateaus at 0.3 K. A possible explanation for these resonance structures is a quantum interference of electron waves between the boundaries to the two-dimensional source and drain region.

Original languageEnglish (US)
Title of host publication2004 4th IEEE Conference on Nanotechnology
Pages488-490
Number of pages3
StatePublished - Dec 1 2004
Event2004 4th IEEE Conference on Nanotechnology - Munich, Germany
Duration: Aug 16 2004Aug 19 2004

Publication series

Name2004 4th IEEE Conference on Nanotechnology

Other

Other2004 4th IEEE Conference on Nanotechnology
CountryGermany
CityMunich
Period8/16/048/19/04

Keywords

  • Gallium compounds
  • Indium compounds
  • Nanotechnology
  • Quantization
  • Quantum effect semiconductor devices

ASJC Scopus subject areas

  • Engineering(all)

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    Beyer, A., & Ferry, D. K. (2004). Quantized conductance in an in-plane gated in0.53Ga 0.47As quantum point contact. In 2004 4th IEEE Conference on Nanotechnology (pp. 488-490). (2004 4th IEEE Conference on Nanotechnology).