@inproceedings{d9cebd1e93a64355bf2bfc5af500fd7d,
title = "Quantized conductance in an in-plane gated in0.53Ga 0.47As quantum point contact",
abstract = "We report quantized conductance in a 500 nm wide In0.53Ga 0.47As quantum point contact defined by 100 nm wide trenches. The surrounding two-dimensional electron gas was used as gate. Electron beam lithography and reactive ion etching with BCl3 formed the trenches. Quantized conductance in steps of 2e2/h as well as one additional step at 0.7(2e2/h) was observed at 4.8 K. Conductance oscillations superimpose the plateaus at 0.3 K. A possible explanation for these resonance structures is a quantum interference of electron waves between the boundaries to the two-dimensional source and drain region.",
keywords = "Gallium compounds, Indium compounds, Nanotechnology, Quantization, Quantum effect semiconductor devices",
author = "Andre Beyer and Ferry, {David K.}",
year = "2004",
month = dec,
day = "1",
language = "English (US)",
isbn = "0780385365",
series = "2004 4th IEEE Conference on Nanotechnology",
pages = "488--490",
booktitle = "2004 4th IEEE Conference on Nanotechnology",
note = "2004 4th IEEE Conference on Nanotechnology ; Conference date: 16-08-2004 Through 19-08-2004",
}