Quantized conductance in an in-plane gated in0.53Ga 0.47As quantum point contact

Andre Beyer; David K. Ferry

Quantized conductance in an in-plane gated in_0.53Ga _0.47As quantum point contact

Andre Beyer, David K. Ferry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report quantized conductance in a 500 nm wide In_0.53Ga _0.47As quantum point contact defined by 100 nm wide trenches. The surrounding two-dimensional electron gas was used as gate. Electron beam lithography and reactive ion etching with BCl₃ formed the trenches. Quantized conductance in steps of 2e²/h as well as one additional step at 0.7(2e²/h) was observed at 4.8 K. Conductance oscillations superimpose the plateaus at 0.3 K. A possible explanation for these resonance structures is a quantum interference of electron waves between the boundaries to the two-dimensional source and drain region.

Original language	English (US)
Title of host publication	2004 4th IEEE Conference on Nanotechnology
Pages	488-490
Number of pages	3
State	Published - Dec 1 2004
Event	2004 4th IEEE Conference on Nanotechnology - Munich, Germany Duration: Aug 16 2004 → Aug 19 2004

Publication series

Name	2004 4th IEEE Conference on Nanotechnology

Other

Other	2004 4th IEEE Conference on Nanotechnology
Country	Germany
City	Munich
Period	8/16/04 → 8/19/04

Keywords

Gallium compounds
Indium compounds
Nanotechnology
Quantization
Quantum effect semiconductor devices

ASJC Scopus subject areas

Engineering(all)

Fingerprint Dive into the research topics of 'Quantized conductance in an in-plane gated in<sub>0.53</sub>Ga <sub>0.47</sub>As quantum point contact'. Together they form a unique fingerprint.

Cite this

@inproceedings{d9cebd1e93a64355bf2bfc5af500fd7d,

title = "Quantized conductance in an in-plane gated in0.53Ga 0.47As quantum point contact",

abstract = "We report quantized conductance in a 500 nm wide In0.53Ga 0.47As quantum point contact defined by 100 nm wide trenches. The surrounding two-dimensional electron gas was used as gate. Electron beam lithography and reactive ion etching with BCl3 formed the trenches. Quantized conductance in steps of 2e2/h as well as one additional step at 0.7(2e2/h) was observed at 4.8 K. Conductance oscillations superimpose the plateaus at 0.3 K. A possible explanation for these resonance structures is a quantum interference of electron waves between the boundaries to the two-dimensional source and drain region.",

keywords = "Gallium compounds, Indium compounds, Nanotechnology, Quantization, Quantum effect semiconductor devices",

author = "Andre Beyer and Ferry, {David K.}",

year = "2004",

month = dec,

day = "1",

language = "English (US)",

isbn = "0780385365",

series = "2004 4th IEEE Conference on Nanotechnology",

pages = "488--490",

booktitle = "2004 4th IEEE Conference on Nanotechnology",

note = "2004 4th IEEE Conference on Nanotechnology ; Conference date: 16-08-2004 Through 19-08-2004",

}

TY - GEN

T1 - Quantized conductance in an in-plane gated in0.53Ga 0.47As quantum point contact

AU - Beyer, Andre

AU - Ferry, David K.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - We report quantized conductance in a 500 nm wide In0.53Ga 0.47As quantum point contact defined by 100 nm wide trenches. The surrounding two-dimensional electron gas was used as gate. Electron beam lithography and reactive ion etching with BCl3 formed the trenches. Quantized conductance in steps of 2e2/h as well as one additional step at 0.7(2e2/h) was observed at 4.8 K. Conductance oscillations superimpose the plateaus at 0.3 K. A possible explanation for these resonance structures is a quantum interference of electron waves between the boundaries to the two-dimensional source and drain region.

AB - We report quantized conductance in a 500 nm wide In0.53Ga 0.47As quantum point contact defined by 100 nm wide trenches. The surrounding two-dimensional electron gas was used as gate. Electron beam lithography and reactive ion etching with BCl3 formed the trenches. Quantized conductance in steps of 2e2/h as well as one additional step at 0.7(2e2/h) was observed at 4.8 K. Conductance oscillations superimpose the plateaus at 0.3 K. A possible explanation for these resonance structures is a quantum interference of electron waves between the boundaries to the two-dimensional source and drain region.

KW - Gallium compounds

KW - Indium compounds

KW - Nanotechnology

KW - Quantization

KW - Quantum effect semiconductor devices

UR - http://www.scopus.com/inward/record.url?scp=20344392920&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20344392920&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:20344392920

SN - 0780385365

T3 - 2004 4th IEEE Conference on Nanotechnology

SP - 488

EP - 490

BT - 2004 4th IEEE Conference on Nanotechnology

T2 - 2004 4th IEEE Conference on Nanotechnology

Y2 - 16 August 2004 through 19 August 2004

ER -