Quantized conductance in an in-plane gated in0.53Ga 0.47As quantum point contact

Andre Beyer; David K. Ferry

Quantized conductance in an in-plane gated in_0.53Ga _0.47As quantum point contact

Andre Beyer, David K. Ferry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report quantized conductance in a 500 nm wide In_0.53Ga _0.47As quantum point contact defined by 100 nm wide trenches. The surrounding two-dimensional electron gas was used as gate. Electron beam lithography and reactive ion etching with BCl₃ formed the trenches. Quantized conductance in steps of 2e²/h as well as one additional step at 0.7(2e²/h) was observed at 4.8 K. Conductance oscillations superimpose the plateaus at 0.3 K. A possible explanation for these resonance structures is a quantum interference of electron waves between the boundaries to the two-dimensional source and drain region.

Original language	English (US)
Title of host publication	2004 4th IEEE Conference on Nanotechnology
Pages	488-490
Number of pages	3
State	Published - Dec 1 2004
Event	2004 4th IEEE Conference on Nanotechnology - Munich, Germany Duration: Aug 16 2004 → Aug 19 2004

Publication series

Name	2004 4th IEEE Conference on Nanotechnology

Other

Other	2004 4th IEEE Conference on Nanotechnology
Country	Germany
City	Munich
Period	8/16/04 → 8/19/04

Keywords

Gallium compounds
Indium compounds
Nanotechnology
Quantization
Quantum effect semiconductor devices

ASJC Scopus subject areas

Engineering(all)

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Beyer, A., & Ferry, D. K. (2004). Quantized conductance in an in-plane gated in_0.53Ga _0.47As quantum point contact. In 2004 4th IEEE Conference on Nanotechnology (pp. 488-490). (2004 4th IEEE Conference on Nanotechnology).

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title = "Quantized conductance in an in-plane gated in0.53Ga 0.47As quantum point contact",

abstract = "We report quantized conductance in a 500 nm wide In0.53Ga 0.47As quantum point contact defined by 100 nm wide trenches. The surrounding two-dimensional electron gas was used as gate. Electron beam lithography and reactive ion etching with BCl3 formed the trenches. Quantized conductance in steps of 2e2/h as well as one additional step at 0.7(2e2/h) was observed at 4.8 K. Conductance oscillations superimpose the plateaus at 0.3 K. A possible explanation for these resonance structures is a quantum interference of electron waves between the boundaries to the two-dimensional source and drain region.",

keywords = "Gallium compounds, Indium compounds, Nanotechnology, Quantization, Quantum effect semiconductor devices",

author = "Andre Beyer and Ferry, {David K.}",

year = "2004",

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AU - Beyer, Andre

AU - Ferry, David K.

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N2 - We report quantized conductance in a 500 nm wide In0.53Ga 0.47As quantum point contact defined by 100 nm wide trenches. The surrounding two-dimensional electron gas was used as gate. Electron beam lithography and reactive ion etching with BCl3 formed the trenches. Quantized conductance in steps of 2e2/h as well as one additional step at 0.7(2e2/h) was observed at 4.8 K. Conductance oscillations superimpose the plateaus at 0.3 K. A possible explanation for these resonance structures is a quantum interference of electron waves between the boundaries to the two-dimensional source and drain region.

AB - We report quantized conductance in a 500 nm wide In0.53Ga 0.47As quantum point contact defined by 100 nm wide trenches. The surrounding two-dimensional electron gas was used as gate. Electron beam lithography and reactive ion etching with BCl3 formed the trenches. Quantized conductance in steps of 2e2/h as well as one additional step at 0.7(2e2/h) was observed at 4.8 K. Conductance oscillations superimpose the plateaus at 0.3 K. A possible explanation for these resonance structures is a quantum interference of electron waves between the boundaries to the two-dimensional source and drain region.

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KW - Indium compounds

KW - Nanotechnology

KW - Quantization

KW - Quantum effect semiconductor devices

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