Quantized conductance in Ag/GeS 2/W conductive-bridge memory cells

John R. Jameson, Nad Gilbert, Foroozan Koushan, Juan Saenz, Janet Wang, Shane Hollmer, Michael Kozicki, Narbeh Derhacobian

Research output: Contribution to journalArticle

66 Scopus citations

Abstract

Ag/GeS 2/W conductive-bridge random access memory (CBRAM) cells are shown to program at room temperature to conductance levels near multiples of the fundamental conductance G 0 = 2e 2/h. This behavior is not accounted for in the traditional view that the conductance of a CBRAM cell is a continuous variable proportional to the maximum current allowed to flow during programming. For on-state resistances on the order of 1/G 0 = 12.9 kΩ or less, quantization implies that the Ag conductive bridge typically contains a constriction, or even an extended chain, that can be as narrow as a single atom. Implications for device modeling and commercial applications are discussed.

Original languageEnglish (US)
Article number6122486
Pages (from-to)257-259
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number2
DOIs
Publication statusPublished - Feb 2012
Externally publishedYes

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Keywords

  • Conductive-bridge memory
  • conductive-bridge random access memory (CBRAM)
  • germanium sulfide
  • nonvolatile memory
  • quantized conductance

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Jameson, J. R., Gilbert, N., Koushan, F., Saenz, J., Wang, J., Hollmer, S., ... Derhacobian, N. (2012). Quantized conductance in Ag/GeS 2/W conductive-bridge memory cells. IEEE Electron Device Letters, 33(2), 257-259. [6122486]. https://doi.org/10.1109/LED.2011.2177803