Quantized conductance in Ag/GeS 2/W conductive-bridge memory cells

John R. Jameson; Nad Gilbert; Foroozan Koushan; Juan Saenz; Janet Wang; Shane Hollmer; Michael Kozicki; Narbeh Derhacobian

doi:10.1109/LED.2011.2177803

Quantized conductance in Ag/GeS ₂/W conductive-bridge memory cells

John R. Jameson, Nad Gilbert, Foroozan Koushan, Juan Saenz, Janet Wang, Shane Hollmer, Michael Kozicki, Narbeh Derhacobian

Research output: Contribution to journal › Article › peer-review

81 Scopus citations

Abstract

Ag/GeS ₂/W conductive-bridge random access memory (CBRAM) cells are shown to program at room temperature to conductance levels near multiples of the fundamental conductance G ₀ = 2e ²/h. This behavior is not accounted for in the traditional view that the conductance of a CBRAM cell is a continuous variable proportional to the maximum current allowed to flow during programming. For on-state resistances on the order of 1/G ₀ = 12.9 kΩ or less, quantization implies that the Ag conductive bridge typically contains a constriction, or even an extended chain, that can be as narrow as a single atom. Implications for device modeling and commercial applications are discussed.

Original language	English (US)
Article number	6122486
Pages (from-to)	257-259
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	2
DOIs	https://doi.org/10.1109/LED.2011.2177803
State	Published - Feb 2012
Externally published	Yes

Keywords

Conductive-bridge memory
conductive-bridge random access memory (CBRAM)
germanium sulfide
nonvolatile memory
quantized conductance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2011.2177803

Cite this

@article{44355eed5c3944da8b174a69300b546e,

title = "Quantized conductance in Ag/GeS 2/W conductive-bridge memory cells",

abstract = "Ag/GeS 2/W conductive-bridge random access memory (CBRAM) cells are shown to program at room temperature to conductance levels near multiples of the fundamental conductance G 0 = 2e 2/h. This behavior is not accounted for in the traditional view that the conductance of a CBRAM cell is a continuous variable proportional to the maximum current allowed to flow during programming. For on-state resistances on the order of 1/G 0 = 12.9 kΩ or less, quantization implies that the Ag conductive bridge typically contains a constriction, or even an extended chain, that can be as narrow as a single atom. Implications for device modeling and commercial applications are discussed.",

keywords = "Conductive-bridge memory, conductive-bridge random access memory (CBRAM), germanium sulfide, nonvolatile memory, quantized conductance",

author = "Jameson, {John R.} and Nad Gilbert and Foroozan Koushan and Juan Saenz and Janet Wang and Shane Hollmer and Michael Kozicki and Narbeh Derhacobian",

year = "2012",

month = feb,

doi = "10.1109/LED.2011.2177803",

language = "English (US)",

volume = "33",

pages = "257--259",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Quantized conductance in Ag/GeS 2/W conductive-bridge memory cells

AU - Jameson, John R.

AU - Gilbert, Nad

AU - Koushan, Foroozan

AU - Saenz, Juan

AU - Wang, Janet

AU - Hollmer, Shane

AU - Kozicki, Michael

AU - Derhacobian, Narbeh

PY - 2012/2

Y1 - 2012/2

N2 - Ag/GeS 2/W conductive-bridge random access memory (CBRAM) cells are shown to program at room temperature to conductance levels near multiples of the fundamental conductance G 0 = 2e 2/h. This behavior is not accounted for in the traditional view that the conductance of a CBRAM cell is a continuous variable proportional to the maximum current allowed to flow during programming. For on-state resistances on the order of 1/G 0 = 12.9 kΩ or less, quantization implies that the Ag conductive bridge typically contains a constriction, or even an extended chain, that can be as narrow as a single atom. Implications for device modeling and commercial applications are discussed.

AB - Ag/GeS 2/W conductive-bridge random access memory (CBRAM) cells are shown to program at room temperature to conductance levels near multiples of the fundamental conductance G 0 = 2e 2/h. This behavior is not accounted for in the traditional view that the conductance of a CBRAM cell is a continuous variable proportional to the maximum current allowed to flow during programming. For on-state resistances on the order of 1/G 0 = 12.9 kΩ or less, quantization implies that the Ag conductive bridge typically contains a constriction, or even an extended chain, that can be as narrow as a single atom. Implications for device modeling and commercial applications are discussed.

KW - Conductive-bridge memory

KW - conductive-bridge random access memory (CBRAM)

KW - germanium sulfide

KW - nonvolatile memory

KW - quantized conductance

UR - http://www.scopus.com/inward/record.url?scp=84856243482&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84856243482&partnerID=8YFLogxK

U2 - 10.1109/LED.2011.2177803

DO - 10.1109/LED.2011.2177803

M3 - Article

AN - SCOPUS:84856243482

SN - 0741-3106

VL - 33

SP - 257

EP - 259

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

M1 - 6122486

ER -