Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells

M. K. Shakfa, D. Kalincev, X. Lu, Shane Johnson, D. A. Beaton, T. Tiedje, A. Chernikov, S. Chatterjee, M. Koch

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Localization effects on the optical properties of GaAs1- xBix/GaAs single quantum wells (SQWs), with Bi contents ranging from x = 1.1% to 6.0%, are investigated using continuous-wave and time-resolved photoluminescence. The temperature- and excitation density dependence of the PL spectra are systematically studied, and the carrier recombination mechanisms are analyzed. At low temperatures, the time-integrated PL emission is dominated by the recombination of localized electron-hole pairs due to the varying content and clustering of Bi in the alloy. The extracted energy scales fluctuate tremendously when the Bi content is varied with a weak tendency to increase with Bi content. Relatively low energy scales are found for the SQW with x = 5.5%, which makes it a potential candidate for long-wavelength optoelectronic devices.

Original languageEnglish (US)
Article number164306
JournalJournal of Applied Physics
Volume114
Issue number16
DOIs
StatePublished - Oct 28 2013

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quantum wells
optoelectronic devices
continuous radiation
tendencies
photoluminescence
optical properties
energy
wavelengths
excitation
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells. / Shakfa, M. K.; Kalincev, D.; Lu, X.; Johnson, Shane; Beaton, D. A.; Tiedje, T.; Chernikov, A.; Chatterjee, S.; Koch, M.

In: Journal of Applied Physics, Vol. 114, No. 16, 164306, 28.10.2013.

Research output: Contribution to journalArticle

Shakfa, MK, Kalincev, D, Lu, X, Johnson, S, Beaton, DA, Tiedje, T, Chernikov, A, Chatterjee, S & Koch, M 2013, 'Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells', Journal of Applied Physics, vol. 114, no. 16, 164306. https://doi.org/10.1063/1.4826621
Shakfa, M. K. ; Kalincev, D. ; Lu, X. ; Johnson, Shane ; Beaton, D. A. ; Tiedje, T. ; Chernikov, A. ; Chatterjee, S. ; Koch, M. / Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells. In: Journal of Applied Physics. 2013 ; Vol. 114, No. 16.
@article{4d20a471c40b4ca9ba79a69ce4b07c5e,
title = "Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells",
abstract = "Localization effects on the optical properties of GaAs1- xBix/GaAs single quantum wells (SQWs), with Bi contents ranging from x = 1.1{\%} to 6.0{\%}, are investigated using continuous-wave and time-resolved photoluminescence. The temperature- and excitation density dependence of the PL spectra are systematically studied, and the carrier recombination mechanisms are analyzed. At low temperatures, the time-integrated PL emission is dominated by the recombination of localized electron-hole pairs due to the varying content and clustering of Bi in the alloy. The extracted energy scales fluctuate tremendously when the Bi content is varied with a weak tendency to increase with Bi content. Relatively low energy scales are found for the SQW with x = 5.5{\%}, which makes it a potential candidate for long-wavelength optoelectronic devices.",
author = "Shakfa, {M. K.} and D. Kalincev and X. Lu and Shane Johnson and Beaton, {D. A.} and T. Tiedje and A. Chernikov and S. Chatterjee and M. Koch",
year = "2013",
month = "10",
day = "28",
doi = "10.1063/1.4826621",
language = "English (US)",
volume = "114",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

TY - JOUR

T1 - Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells

AU - Shakfa, M. K.

AU - Kalincev, D.

AU - Lu, X.

AU - Johnson, Shane

AU - Beaton, D. A.

AU - Tiedje, T.

AU - Chernikov, A.

AU - Chatterjee, S.

AU - Koch, M.

PY - 2013/10/28

Y1 - 2013/10/28

N2 - Localization effects on the optical properties of GaAs1- xBix/GaAs single quantum wells (SQWs), with Bi contents ranging from x = 1.1% to 6.0%, are investigated using continuous-wave and time-resolved photoluminescence. The temperature- and excitation density dependence of the PL spectra are systematically studied, and the carrier recombination mechanisms are analyzed. At low temperatures, the time-integrated PL emission is dominated by the recombination of localized electron-hole pairs due to the varying content and clustering of Bi in the alloy. The extracted energy scales fluctuate tremendously when the Bi content is varied with a weak tendency to increase with Bi content. Relatively low energy scales are found for the SQW with x = 5.5%, which makes it a potential candidate for long-wavelength optoelectronic devices.

AB - Localization effects on the optical properties of GaAs1- xBix/GaAs single quantum wells (SQWs), with Bi contents ranging from x = 1.1% to 6.0%, are investigated using continuous-wave and time-resolved photoluminescence. The temperature- and excitation density dependence of the PL spectra are systematically studied, and the carrier recombination mechanisms are analyzed. At low temperatures, the time-integrated PL emission is dominated by the recombination of localized electron-hole pairs due to the varying content and clustering of Bi in the alloy. The extracted energy scales fluctuate tremendously when the Bi content is varied with a weak tendency to increase with Bi content. Relatively low energy scales are found for the SQW with x = 5.5%, which makes it a potential candidate for long-wavelength optoelectronic devices.

UR - http://www.scopus.com/inward/record.url?scp=84887281637&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887281637&partnerID=8YFLogxK

U2 - 10.1063/1.4826621

DO - 10.1063/1.4826621

M3 - Article

AN - SCOPUS:84887281637

VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 16

M1 - 164306

ER -