Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells

M. K. Shakfa, D. Kalincev, X. Lu, Shane Johnson, D. A. Beaton, T. Tiedje, A. Chernikov, S. Chatterjee, M. Koch

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Abstract

Localization effects on the optical properties of GaAs1- xBix/GaAs single quantum wells (SQWs), with Bi contents ranging from x = 1.1% to 6.0%, are investigated using continuous-wave and time-resolved photoluminescence. The temperature- and excitation density dependence of the PL spectra are systematically studied, and the carrier recombination mechanisms are analyzed. At low temperatures, the time-integrated PL emission is dominated by the recombination of localized electron-hole pairs due to the varying content and clustering of Bi in the alloy. The extracted energy scales fluctuate tremendously when the Bi content is varied with a weak tendency to increase with Bi content. Relatively low energy scales are found for the SQW with x = 5.5%, which makes it a potential candidate for long-wavelength optoelectronic devices.

Original languageEnglish (US)
Article number164306
JournalJournal of Applied Physics
Volume114
Issue number16
DOIs
StatePublished - Oct 28 2013

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Shakfa, M. K., Kalincev, D., Lu, X., Johnson, S., Beaton, D. A., Tiedje, T., Chernikov, A., Chatterjee, S., & Koch, M. (2013). Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells. Journal of Applied Physics, 114(16), [164306]. https://doi.org/10.1063/1.4826621