Quantitative SIMS analysis of hydrogenated amorphous silicon using superimposed deuterium implant standards

A new approach to quantitative analysis of major element levels by secondary ion mass spectrometry is reported. A minor isotope of the element of interest is implanted directly into the analytical sample to be utilized as a standard. This approach has been used for analysis of hydrogen in amorphous silicon. The hydrogen content determined by reference to the implanted deuterium standard was compared to a nuclear reaction analysis of the same sample; the results agreed within the combined uncertainties of the measurements (10%). Isotope fractionation in the ion ejection process was determined by analysis of a silicon sample implanted with the species HD⁺.