Quantitative SIMS analysis of hydrogenated amorphous silicon using superimposed deuterium implant standards

Peter Williams, Katherine M. Stika, John A. Davies, Thomas E. Jackman

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

A new approach to quantitative analysis of major element levels by secondary ion mass spectrometry is reported. A minor isotope of the element of interest is implanted directly into the analytical sample to be utilized as a standard. This approach has been used for analysis of hydrogen in amorphous silicon. The hydrogen content determined by reference to the implanted deuterium standard was compared to a nuclear reaction analysis of the same sample; the results agreed within the combined uncertainties of the measurements (10%). Isotope fractionation in the ion ejection process was determined by analysis of a silicon sample implanted with the species HD+.

Original languageEnglish (US)
Pages (from-to)299-302
Number of pages4
JournalNuclear Instruments and Methods In Physics Research
Volume218
Issue number1-3
DOIs
StatePublished - Dec 15 1983

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Deuterium
Secondary ion mass spectrometry
Amorphous silicon
Isotopes
Hydrogen
Nuclear reactions
Fractionation
Chemical elements
Silicon
Ions
Chemical analysis
Uncertainty

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Quantitative SIMS analysis of hydrogenated amorphous silicon using superimposed deuterium implant standards. / Williams, Peter; Stika, Katherine M.; Davies, John A.; Jackman, Thomas E.

In: Nuclear Instruments and Methods In Physics Research, Vol. 218, No. 1-3, 15.12.1983, p. 299-302.

Research output: Contribution to journalArticle

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