Abstract
Using an 18 O implant as an internal standard allows quantitative determination of oxygen levels in sputtered samples during a depth profile analysis, in which additional oxygen may be delivered to the surface either by an oxygen flood or by using an oxygen primary ion beam. This study has evaluated O/Si ratios in silicon samples sputtered with atomic or molecular oxygen ( 16 O) primary ion beams at a range of energies and angles below and above the 'critical' angle for surface SiO 2 formation (i.e. the angle for which the partial sputter yield of Si drops below 0.5). For each O/Si value, useful ion yields (ions detected/atom sputtered) have been determined for positive ions of Si + and for a variety of elements implanted into the Si wafer.
Original language | English (US) |
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Pages (from-to) | 729-733 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 231-232 |
DOIs | |
State | Published - Jun 15 2004 |
Keywords
- Minor isotope standard
- Oxidation of silicon
- Surface oxygen
- Useful ion yield
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- General Physics and Astronomy
- Surfaces and Interfaces
- Surfaces, Coatings and Films