Quantitative measurement of O/Si ratios in oxygen-sputtered silicon using 18 O implant standards

Richard C. Sobers, Klaus Franzreb, Peter Williams

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


Using an 18 O implant as an internal standard allows quantitative determination of oxygen levels in sputtered samples during a depth profile analysis, in which additional oxygen may be delivered to the surface either by an oxygen flood or by using an oxygen primary ion beam. This study has evaluated O/Si ratios in silicon samples sputtered with atomic or molecular oxygen ( 16 O) primary ion beams at a range of energies and angles below and above the 'critical' angle for surface SiO 2 formation (i.e. the angle for which the partial sputter yield of Si drops below 0.5). For each O/Si value, useful ion yields (ions detected/atom sputtered) have been determined for positive ions of Si + and for a variety of elements implanted into the Si wafer.

Original languageEnglish (US)
Pages (from-to)729-733
Number of pages5
JournalApplied Surface Science
StatePublished - Jun 15 2004


  • Minor isotope standard
  • Oxidation of silicon
  • Surface oxygen
  • Useful ion yield

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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