Abstract

The electrostatic potential profile across the p-n junction of an InGaAs light-emitting diode with linearly graded AlGaAs triangular barriers has been measured using off-axis electron holography. Simulations of the junction profile show small discrepancies with experimental measurements in the region of the p -and n -doped AlGaAs barriers, which are located away from the InGaAs quantum wells. Revised simulations reproduce the measurements reasonably when a carrier-trap density of 6× 1016 cm-3 in the AlGaAs barriers is subtracted from the dopant concentrations. The presence of oxygen impurities is considered as the most likely reason for the reduction in doping efficiency.

Original languageEnglish (US)
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume28
Issue number1
DOIs
StatePublished - 2010

Fingerprint

Electron holography
p-n junctions
holography
Light emitting diodes
aluminum gallium arsenides
light emitting diodes
Doping (additives)
Semiconductor quantum wells
Electrostatics
electrons
Impurities
profiles
Oxygen
simulation
traps
quantum wells
electrostatics
impurities
oxygen

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Quantitative dopant profiling of p-n junction in InGaAs/AlGaAs light-emitting diode using off-axis electron holography",
abstract = "The electrostatic potential profile across the p-n junction of an InGaAs light-emitting diode with linearly graded AlGaAs triangular barriers has been measured using off-axis electron holography. Simulations of the junction profile show small discrepancies with experimental measurements in the region of the p -and n -doped AlGaAs barriers, which are located away from the InGaAs quantum wells. Revised simulations reproduce the measurements reasonably when a carrier-trap density of 6× 1016 cm-3 in the AlGaAs barriers is subtracted from the dopant concentrations. The presence of oxygen impurities is considered as the most likely reason for the reduction in doping efficiency.",
author = "Suk Chung and Shane Johnson and Ding Ding and Yong-Hang Zhang and David Smith and Martha McCartney",
year = "2010",
doi = "10.1116/1.3244575",
language = "English (US)",
volume = "28",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
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T1 - Quantitative dopant profiling of p-n junction in InGaAs/AlGaAs light-emitting diode using off-axis electron holography

AU - Chung, Suk

AU - Johnson, Shane

AU - Ding, Ding

AU - Zhang, Yong-Hang

AU - Smith, David

AU - McCartney, Martha

PY - 2010

Y1 - 2010

N2 - The electrostatic potential profile across the p-n junction of an InGaAs light-emitting diode with linearly graded AlGaAs triangular barriers has been measured using off-axis electron holography. Simulations of the junction profile show small discrepancies with experimental measurements in the region of the p -and n -doped AlGaAs barriers, which are located away from the InGaAs quantum wells. Revised simulations reproduce the measurements reasonably when a carrier-trap density of 6× 1016 cm-3 in the AlGaAs barriers is subtracted from the dopant concentrations. The presence of oxygen impurities is considered as the most likely reason for the reduction in doping efficiency.

AB - The electrostatic potential profile across the p-n junction of an InGaAs light-emitting diode with linearly graded AlGaAs triangular barriers has been measured using off-axis electron holography. Simulations of the junction profile show small discrepancies with experimental measurements in the region of the p -and n -doped AlGaAs barriers, which are located away from the InGaAs quantum wells. Revised simulations reproduce the measurements reasonably when a carrier-trap density of 6× 1016 cm-3 in the AlGaAs barriers is subtracted from the dopant concentrations. The presence of oxygen impurities is considered as the most likely reason for the reduction in doping efficiency.

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