The electrostatic potential profile across the p-n junction of an InGaAs light-emitting diode with linearly graded AlGaAs triangular barriers has been measured using off-axis electron holography. Simulations of the junction profile show small discrepancies with experimental measurements in the region of the p -and n -doped AlGaAs barriers, which are located away from the InGaAs quantum wells. Revised simulations reproduce the measurements reasonably when a carrier-trap density of 6× 1016 cm-3 in the AlGaAs barriers is subtracted from the dopant concentrations. The presence of oxygen impurities is considered as the most likely reason for the reduction in doping efficiency.

Original languageEnglish (US)
Pages (from-to)C1D11-C1D14
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number1
StatePublished - 2010

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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