The electrostatic potential profile across the p-n junction of an InGaAs light-emitting diode with linearly graded AlGaAs triangular barriers has been measured using off-axis electron holography. Simulations of the junction profile show small discrepancies with experimental measurements in the region of the p -and n -doped AlGaAs barriers, which are located away from the InGaAs quantum wells. Revised simulations reproduce the measurements reasonably when a carrier-trap density of 6× 1016 cm-3 in the AlGaAs barriers is subtracted from the dopant concentrations. The presence of oxygen impurities is considered as the most likely reason for the reduction in doping efficiency.
|Original language||English (US)|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Mar 19 2010|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering