Quantitative determination of the metastability of flat Ag overlayers on GaAs(110)

Hongbin Yu, C. S. Jiang, Ph Ebert, X. D. Wang, J. M. White, Qian Niu, Zhenyu Zhang, C. K. Shih

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Abstract

The layer resolved metastability of flat silver overlayers on GaAs was quantitatively determined using scanning tunneling microscopy. The kinetic barrier the initial system had to overcome to transform from the wetting to nonwetting morphology was calculated. Experiments were performed in an ultrahigh vacuum system and Ag films were deposited on in situ cleaved GaAs surfaces at temperatures below 140 K, followed by annealing to room temperature. Results indicated that the metastable configuration of the Ag overlayer was defined by the quantum nature of the conduction electrons confined within the overlayer.

Original languageEnglish (US)
Article number016102
Pages (from-to)161021-161024
Number of pages4
JournalPhysical Review Letters
Volume88
Issue number1
StatePublished - Jan 7 2002
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Yu, H., Jiang, C. S., Ebert, P., Wang, X. D., White, J. M., Niu, Q., Zhang, Z., & Shih, C. K. (2002). Quantitative determination of the metastability of flat Ag overlayers on GaAs(110). Physical Review Letters, 88(1), 161021-161024. [016102].