Quantitative assessment of the effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under subpicosecond laser excitation

Kong-Thon Tsen, R. P. Joshi, A. Salvador, A. Botcharev, H. Morkoc

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Abstract

We have used electric-field-induced Raman scattering to quantitatively assess the effects of carrier screening on the average electric fields in a GaAs-based p-i-n nanostructure semiconductor under subpicosecond laser photoexcitation. Our experimental results demonstrated that the effects of carrier screening on the average electric field were negligible for a photoexcited electron-hole pair density of n≤1015 cm-3. As the density of photoexcited carriers increased, we observed a significant decrease of the average electric field. In particular, for n = 1018 cm-3, a decrease of electric field of about 50% was found. All of these experimental results were explained by ensemble Monte Carlo simulations and very good agreement has been obtained.

Original languageEnglish (US)
Pages (from-to)406-408
Number of pages3
JournalJournal of Applied Physics
Volume81
Issue number1
Publication statusPublished - Jan 1 1997

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ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

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