Quantitative assessment of the effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under subpicosecond laser excitation

Kong-Thon Tsen; R. P. Joshi; A. Salvador; A. Botcharev; H. Morkoc

doi:10.1063/1.364072

Quantitative assessment of the effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under subpicosecond laser excitation

Kong-Thon Tsen, R. P. Joshi, A. Salvador, A. Botcharev, H. Morkoc

Physics

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We have used electric-field-induced Raman scattering to quantitatively assess the effects of carrier screening on the average electric fields in a GaAs-based p-i-n nanostructure semiconductor under subpicosecond laser photoexcitation. Our experimental results demonstrated that the effects of carrier screening on the average electric field were negligible for a photoexcited electron-hole pair density of n≤10¹⁵ cm^-3. As the density of photoexcited carriers increased, we observed a significant decrease of the average electric field. In particular, for n = 10¹⁸ cm^-3, a decrease of electric field of about 50% was found. All of these experimental results were explained by ensemble Monte Carlo simulations and very good agreement has been obtained.

Original language	English (US)
Pages (from-to)	406-408
Number of pages	3
Journal	Journal of Applied Physics
Volume	81
Issue number	1
DOIs	https://doi.org/10.1063/1.364072
State	Published - Jan 1 1997

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "We have used electric-field-induced Raman scattering to quantitatively assess the effects of carrier screening on the average electric fields in a GaAs-based p-i-n nanostructure semiconductor under subpicosecond laser photoexcitation. Our experimental results demonstrated that the effects of carrier screening on the average electric field were negligible for a photoexcited electron-hole pair density of n≤1015 cm-3. As the density of photoexcited carriers increased, we observed a significant decrease of the average electric field. In particular, for n = 1018 cm-3, a decrease of electric field of about 50% was found. All of these experimental results were explained by ensemble Monte Carlo simulations and very good agreement has been obtained.",

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T1 - Quantitative assessment of the effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under subpicosecond laser excitation

AU - Tsen, Kong-Thon

AU - Joshi, R. P.

AU - Salvador, A.

AU - Botcharev, A.

AU - Morkoc, H.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - We have used electric-field-induced Raman scattering to quantitatively assess the effects of carrier screening on the average electric fields in a GaAs-based p-i-n nanostructure semiconductor under subpicosecond laser photoexcitation. Our experimental results demonstrated that the effects of carrier screening on the average electric field were negligible for a photoexcited electron-hole pair density of n≤1015 cm-3. As the density of photoexcited carriers increased, we observed a significant decrease of the average electric field. In particular, for n = 1018 cm-3, a decrease of electric field of about 50% was found. All of these experimental results were explained by ensemble Monte Carlo simulations and very good agreement has been obtained.

AB - We have used electric-field-induced Raman scattering to quantitatively assess the effects of carrier screening on the average electric fields in a GaAs-based p-i-n nanostructure semiconductor under subpicosecond laser photoexcitation. Our experimental results demonstrated that the effects of carrier screening on the average electric field were negligible for a photoexcited electron-hole pair density of n≤1015 cm-3. As the density of photoexcited carriers increased, we observed a significant decrease of the average electric field. In particular, for n = 1018 cm-3, a decrease of electric field of about 50% was found. All of these experimental results were explained by ensemble Monte Carlo simulations and very good agreement has been obtained.

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Quantitative assessment of the effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under subpicosecond laser excitation

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