Quantitative analysis of strain distribution in InAs/InAs 1-xSbx superlattices

Krishnamurthy Mahalingam; Elizabeth H. Steenbergen; Gail J. Brown; Yong-Hang Zhang

doi:10.1063/1.4817969

Quantitative analysis of strain distribution in InAs/InAs _1-xSb_x superlattices

Krishnamurthy Mahalingam, Elizabeth H. Steenbergen, Gail J. Brown, Yong-Hang Zhang

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Atomic resolution transmission electron microscopy is performed to examine the strain distribution in an InAs/InAs_1-xSb_x superlattice grown on a (100)-GaSb substrate. The strain profiles reveal that the thickness of tensile regions in the superlattice is significantly lower than expected, with a corresponding increase in thickness of the compressive regions. Furthermore, significant grading is observed within the tensile regions of the strain profile, indicating Sb intermixing from the InAsSb growth surface. The results signify an effective reduction in the InAs layer thickness due to the anion (As-Sb) exchange process at the InAs-on-InAsSb interface.

Original language	English (US)
Article number	061908
Journal	Applied Physics Letters
Volume	103
Issue number	6
DOIs	https://doi.org/10.1063/1.4817969
State	Published - Aug 5 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Quantitative analysis of strain distribution in InAs/InAs 1-xSbx superlattices",

abstract = "Atomic resolution transmission electron microscopy is performed to examine the strain distribution in an InAs/InAs1-xSbx superlattice grown on a (100)-GaSb substrate. The strain profiles reveal that the thickness of tensile regions in the superlattice is significantly lower than expected, with a corresponding increase in thickness of the compressive regions. Furthermore, significant grading is observed within the tensile regions of the strain profile, indicating Sb intermixing from the InAsSb growth surface. The results signify an effective reduction in the InAs layer thickness due to the anion (As-Sb) exchange process at the InAs-on-InAsSb interface.",

author = "Krishnamurthy Mahalingam and Steenbergen, {Elizabeth H.} and Brown, {Gail J.} and Yong-Hang Zhang",

note = "Funding Information: This research was sponsored by the Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, under Air Force contract FA8650-08-D-5200. The superlattice sample was grown by IQE, Inc.",

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AU - Mahalingam, Krishnamurthy

AU - Steenbergen, Elizabeth H.

AU - Brown, Gail J.

AU - Zhang, Yong-Hang

N1 - Funding Information: This research was sponsored by the Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, under Air Force contract FA8650-08-D-5200. The superlattice sample was grown by IQE, Inc.

PY - 2013/8/5

Y1 - 2013/8/5

N2 - Atomic resolution transmission electron microscopy is performed to examine the strain distribution in an InAs/InAs1-xSbx superlattice grown on a (100)-GaSb substrate. The strain profiles reveal that the thickness of tensile regions in the superlattice is significantly lower than expected, with a corresponding increase in thickness of the compressive regions. Furthermore, significant grading is observed within the tensile regions of the strain profile, indicating Sb intermixing from the InAsSb growth surface. The results signify an effective reduction in the InAs layer thickness due to the anion (As-Sb) exchange process at the InAs-on-InAsSb interface.

AB - Atomic resolution transmission electron microscopy is performed to examine the strain distribution in an InAs/InAs1-xSbx superlattice grown on a (100)-GaSb substrate. The strain profiles reveal that the thickness of tensile regions in the superlattice is significantly lower than expected, with a corresponding increase in thickness of the compressive regions. Furthermore, significant grading is observed within the tensile regions of the strain profile, indicating Sb intermixing from the InAsSb growth surface. The results signify an effective reduction in the InAs layer thickness due to the anion (As-Sb) exchange process at the InAs-on-InAsSb interface.

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Quantitative analysis of strain distribution in InAs/InAs _1-xSb_x superlattices

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