Quantitative analysis of chemical vapor deposition refractory metal silicides

Lori A. Streit, Peter Williams

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Chemical vapor deposition films of titanium and tungsten silicides have been characterized using secondary ion mass spectrometry (SIMS) and sputtered neutral analysis (SNA). SIMS data for bulk impurities and interfacial contaminants was quantified by reference to ion implant standards generated in situ in the ion microanalyzer. SNA analyses for film stoichiometry were also performed in the same instrument, ionization of the sputtered neutral flux being achieved by gas phase impact of primary ions. The films were found to contain significant levels of H, O, F, and Cl impurities, which largely migrated on annealing either out of the film or to a subsurface interface.

Original languageEnglish (US)
Pages (from-to)1979-1983
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume5
Issue number4
DOIs
StatePublished - Jul 1 1987

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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