Quantitative analysis of buried interfacial impurity layers by SIMS and RBS

Peter Williams, Judith E. Baker, John A. Davies, Tom E. Jackman

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

In order to test the quantitative accuracy of secondary ion mass spectrometry (SIMS) analysis of interfacial layers using ion-implanted standards, we have compared SIMS and Rutherford backscattering (RBS) analyses of buried silver layers (about 1015 Ag/cm2) at silicon-silicon thin film interfaces. The silver interface concentration was determined by RBS on a system whose calibration was checked using a bismuth implant standard. At the same time, measurements were made on a set of silver-implanted samples. These implants were subsequently used as secondary standards in the SIMS analyses of the silver interfacial layers. The results of the independent analyses indicate that SIMS analyses at interfaces can be performed with a relative accuracy bettet than 15% and with detection limits on the order of 10-3 monolayer.

Original languageEnglish (US)
Pages (from-to)318-322
Number of pages5
JournalNuclear Instruments and Methods
Volume191
Issue number1-3
DOIs
StatePublished - Dec 31 1981
Externally publishedYes

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Secondary Ion Mass Spectrometry
Rutherford backscattering spectroscopy
Secondary ion mass spectrometry
Silver
Impurities
Silicon
Chemical analysis
Bismuth
Time measurement
Calibration
Limit of Detection
Monolayers
Ions
Thin films

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Quantitative analysis of buried interfacial impurity layers by SIMS and RBS. / Williams, Peter; Baker, Judith E.; Davies, John A.; Jackman, Tom E.

In: Nuclear Instruments and Methods, Vol. 191, No. 1-3, 31.12.1981, p. 318-322.

Research output: Contribution to journalArticle

Williams, Peter ; Baker, Judith E. ; Davies, John A. ; Jackman, Tom E. / Quantitative analysis of buried interfacial impurity layers by SIMS and RBS. In: Nuclear Instruments and Methods. 1981 ; Vol. 191, No. 1-3. pp. 318-322.
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