Quantitative analysis of a-Si1-xCx: H thin films by vibrational spectroscopy and nuclear methods

D. Gracin, I. Bogdanović, V. Borjanović, M. Jakšić, Ž Pastuović, J. M. Dutta, B. Vlahović, R. J. Nemanich

Research output: Contribution to journalConference article

16 Scopus citations

Abstract

Thin amorphous hydrogenated silicon-carbon films, a-Si1-xCx : H were deposited by magnetron sputtering on glass and mono-crystalline substrates with carbon content from x = 0.2 to 1, wide variation of hydrogen concentration and different degrees of structural ordering. The obtained films were investigated by Fourier transform infra-red (FTIR) spectroscopy, Raman spectroscopy, Rutherford backscattering (RBS) and elastic recoil detection analysis (ERDA). The results of the quantitative analyses obtained by the above-mentioned techniques were compared. It has been concluded that the applied vibrational methods can be used quantitatively which enables estimation of the degree of chemical ordering in the analysed samples.

Original languageEnglish (US)
Pages (from-to)303-308
Number of pages6
JournalVacuum
Volume61
Issue number2-4
DOIs
StatePublished - May 14 2001
Externally publishedYes
Event8th Joint Vaccum Conference of Croatia, Austria, Slovenia, Hungary - Pule, Croatia
Duration: Jun 4 2000Jun 9 2000

Keywords

  • Amorphous silicon carbide
  • ERDA
  • FTIR
  • Quantitative analysis
  • RBS
  • Raman

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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    Gracin, D., Bogdanović, I., Borjanović, V., Jakšić, M., Pastuović, Ž., Dutta, J. M., Vlahović, B., & Nemanich, R. J. (2001). Quantitative analysis of a-Si1-xCx: H thin films by vibrational spectroscopy and nuclear methods. Vacuum, 61(2-4), 303-308. https://doi.org/10.1016/s0042-207x(01)00134-8