Quantitative analysis of 2-D electrostatic potential distributions in 90-nm Si pMOSFETs using off-axis electron holography

Myung Geun Han; Peter Fejes; Qianghua Xie; Sandeep Bagchi; Bill Taylor; James Conner; Martha McCartney

doi:10.1109/TED.2007.908901

Quantitative analysis of 2-D electrostatic potential distributions in 90-nm Si pMOSFETs using off-axis electron holography

Myung Geun Han, Peter Fejes, Qianghua Xie, Sandeep Bagchi, Bill Taylor, James Conner, Martha McCartney

Physics

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Off-axis electron holography has been used for quantitative analysis of 2-D electrostatic potential distributions in 90-nm Si p-channel MOSFETs (pMOSFETs). The sample preparation for electron holography is based on focused-ion-beam (FIB) and low-energy (3 keV) Ar-ion backside milling. The measured electrostatic potentials from two pMOSFETs with different offset spacer oxide widths are compared in terms of the separation of extension junctions and source/drain (S/D) junctions. The metallurgical gate length L_met and the S/D junction encroachment (δ L) under the gate are measured and compared for the two devices. The electrostatic potential abruptness and electric field intensity are investigated around the drain side, and the lateral and vertical electric field intensities are also compared.

Original language	English (US)
Pages (from-to)	3336-3341
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	54
Issue number	12
DOIs	https://doi.org/10.1109/TED.2007.908901
State	Published - Dec 2007

Keywords

2-D dopant profiling
Electron holography
Gate length measurement
Holography
MOSFET
Measurement
Two-dimensional displays

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2007.908901

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title = "Quantitative analysis of 2-D electrostatic potential distributions in 90-nm Si pMOSFETs using off-axis electron holography",

abstract = "Off-axis electron holography has been used for quantitative analysis of 2-D electrostatic potential distributions in 90-nm Si p-channel MOSFETs (pMOSFETs). The sample preparation for electron holography is based on focused-ion-beam (FIB) and low-energy (3 keV) Ar-ion backside milling. The measured electrostatic potentials from two pMOSFETs with different offset spacer oxide widths are compared in terms of the separation of extension junctions and source/drain (S/D) junctions. The metallurgical gate length Lmet and the S/D junction encroachment (δ L) under the gate are measured and compared for the two devices. The electrostatic potential abruptness and electric field intensity are investigated around the drain side, and the lateral and vertical electric field intensities are also compared.",

keywords = "2-D dopant profiling, Electron holography, Gate length measurement, Holography, MOSFET, Measurement, Two-dimensional displays",

author = "Han, {Myung Geun} and Peter Fejes and Qianghua Xie and Sandeep Bagchi and Bill Taylor and James Conner and Martha McCartney",

note = "Funding Information: Manuscript received February 16, 2007; revised June 26, 2007. This work was supported in part by the U.S. Department of Energy under Grant DE-FG02-04ER46168. The review of this paper was arranged by Editor H. Jaouen. M.-G. Han is with the Department of Physics, School of Materials, Arizona State University, Tempe, AZ 85287-8706 USA (e-mail: mghan@asu.edu). P. Fejes and Q. Xie are with the Physical Analysis Laboratory, Advanced Products Research and Development Laboratory, Freescale Semiconductor Inc., Tempe, AZ 85284 USA. S. Bagchi, B. Taylor, and J. Conner are with the Austin Silicon Technology Solutions, Freescale Semiconductor Inc., Austin, TX 78721 USA. M. R. McCartney is with the Department of Physics, Arizona State University, Tempe, AZ 85287-1504 USA (e-mail: Molly.McCartney@asu.edu). Digital Object Identifier 10.1109/TED.2007.908901",

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language = "English (US)",

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AU - Han, Myung Geun

AU - Fejes, Peter

AU - Xie, Qianghua

AU - Bagchi, Sandeep

AU - Taylor, Bill

AU - Conner, James

AU - McCartney, Martha

N1 - Funding Information: Manuscript received February 16, 2007; revised June 26, 2007. This work was supported in part by the U.S. Department of Energy under Grant DE-FG02-04ER46168. The review of this paper was arranged by Editor H. Jaouen. M.-G. Han is with the Department of Physics, School of Materials, Arizona State University, Tempe, AZ 85287-8706 USA (e-mail: mghan@asu.edu). P. Fejes and Q. Xie are with the Physical Analysis Laboratory, Advanced Products Research and Development Laboratory, Freescale Semiconductor Inc., Tempe, AZ 85284 USA. S. Bagchi, B. Taylor, and J. Conner are with the Austin Silicon Technology Solutions, Freescale Semiconductor Inc., Austin, TX 78721 USA. M. R. McCartney is with the Department of Physics, Arizona State University, Tempe, AZ 85287-1504 USA (e-mail: Molly.McCartney@asu.edu). Digital Object Identifier 10.1109/TED.2007.908901

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N2 - Off-axis electron holography has been used for quantitative analysis of 2-D electrostatic potential distributions in 90-nm Si p-channel MOSFETs (pMOSFETs). The sample preparation for electron holography is based on focused-ion-beam (FIB) and low-energy (3 keV) Ar-ion backside milling. The measured electrostatic potentials from two pMOSFETs with different offset spacer oxide widths are compared in terms of the separation of extension junctions and source/drain (S/D) junctions. The metallurgical gate length Lmet and the S/D junction encroachment (δ L) under the gate are measured and compared for the two devices. The electrostatic potential abruptness and electric field intensity are investigated around the drain side, and the lateral and vertical electric field intensities are also compared.

AB - Off-axis electron holography has been used for quantitative analysis of 2-D electrostatic potential distributions in 90-nm Si p-channel MOSFETs (pMOSFETs). The sample preparation for electron holography is based on focused-ion-beam (FIB) and low-energy (3 keV) Ar-ion backside milling. The measured electrostatic potentials from two pMOSFETs with different offset spacer oxide widths are compared in terms of the separation of extension junctions and source/drain (S/D) junctions. The metallurgical gate length Lmet and the S/D junction encroachment (δ L) under the gate are measured and compared for the two devices. The electrostatic potential abruptness and electric field intensity are investigated around the drain side, and the lateral and vertical electric field intensities are also compared.

KW - 2-D dopant profiling

KW - Electron holography

KW - Gate length measurement

KW - Holography

KW - MOSFET

KW - Measurement

KW - Two-dimensional displays

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Quantitative analysis of 2-D electrostatic potential distributions in 90-nm Si pMOSFETs using off-axis electron holography

Abstract

Keywords

ASJC Scopus subject areas

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