Quantitative analysis of 1D ultra-shallow junctions using off-axis electron holography

Martha McCartney, M. G. Han, Jing Li, Peter Fejes, Qianghua Xie, Gordon Tam, Sandeep Bagchi, Bill Taylor, James Conner

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The ability to carefully engineer ultra-shallow junctions close to the gate is critical for high performance advanced CMOS devices. Electron holography (EH) has been proposed and investigated as one of the promising techniques for mapping dopant profiles at a nanometer scale in two-dimension (2D). We have developed a low-damage and reproducible sample preparation technique (based on polishing) to prepare samples suitable for EH imaging. Accurate measurements of electro-static potentials across ultra-shallow junctions (both N and P type) by EH have been obtained. Potential profiles derived from ultra-shallow junctions (in the range of 10-30 nm) closely match simulated profiles calculated from secondary ion mass spectroscopy (SIMS) doping profiles of the same junctions. This sets a good baseline for extending the application of electron holography to the quantitative mapping of 2D dopant profiles at close to nanometer spatial resolution.

Original languageEnglish (US)
Title of host publicationAIP Conference Proceedings
Pages565-568
Number of pages4
Volume788
DOIs
StatePublished - Sep 9 2005
Event2005 International Conference on Characterization and Metrology for ULSI Technology - Richardson, TX, United States
Duration: Mar 15 2005Mar 18 2005

Other

Other2005 International Conference on Characterization and Metrology for ULSI Technology
CountryUnited States
CityRichardson, TX
Period3/15/053/18/05

Fingerprint

holography
quantitative analysis
profiles
electrons
polishing
engineers
CMOS
mass spectroscopy
spatial resolution
damage
preparation
ions

Keywords

  • Dopant profiles
  • Electron holography
  • Ultra-shallow junctions

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

McCartney, M., Han, M. G., Li, J., Fejes, P., Xie, Q., Tam, G., ... Conner, J. (2005). Quantitative analysis of 1D ultra-shallow junctions using off-axis electron holography. In AIP Conference Proceedings (Vol. 788, pp. 565-568) https://doi.org/10.1063/1.2063019

Quantitative analysis of 1D ultra-shallow junctions using off-axis electron holography. / McCartney, Martha; Han, M. G.; Li, Jing; Fejes, Peter; Xie, Qianghua; Tam, Gordon; Bagchi, Sandeep; Taylor, Bill; Conner, James.

AIP Conference Proceedings. Vol. 788 2005. p. 565-568.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

McCartney, M, Han, MG, Li, J, Fejes, P, Xie, Q, Tam, G, Bagchi, S, Taylor, B & Conner, J 2005, Quantitative analysis of 1D ultra-shallow junctions using off-axis electron holography. in AIP Conference Proceedings. vol. 788, pp. 565-568, 2005 International Conference on Characterization and Metrology for ULSI Technology, Richardson, TX, United States, 3/15/05. https://doi.org/10.1063/1.2063019
McCartney M, Han MG, Li J, Fejes P, Xie Q, Tam G et al. Quantitative analysis of 1D ultra-shallow junctions using off-axis electron holography. In AIP Conference Proceedings. Vol. 788. 2005. p. 565-568 https://doi.org/10.1063/1.2063019
McCartney, Martha ; Han, M. G. ; Li, Jing ; Fejes, Peter ; Xie, Qianghua ; Tam, Gordon ; Bagchi, Sandeep ; Taylor, Bill ; Conner, James. / Quantitative analysis of 1D ultra-shallow junctions using off-axis electron holography. AIP Conference Proceedings. Vol. 788 2005. pp. 565-568
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