Quantifying polarization fields and sheet charge in III-nitride HEMT devices using off-axis electron holography

M. R. Johnson, D. A. Cullen, David Smith, L. Zhou, Martha McCartney

Research output: Contribution to journalArticle

Original languageEnglish (US)
Pages (from-to)1832-1833
Number of pages2
JournalMicroscopy and Microanalysis
Volume18
DOIs
StatePublished - 2012

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Electron holography
High electron mobility transistors
high electron mobility transistors
Nitrides
holography
nitrides
Polarization
polarization
electrons

ASJC Scopus subject areas

  • Instrumentation

Cite this

Quantifying polarization fields and sheet charge in III-nitride HEMT devices using off-axis electron holography. / Johnson, M. R.; Cullen, D. A.; Smith, David; Zhou, L.; McCartney, Martha.

In: Microscopy and Microanalysis, Vol. 18, 2012, p. 1832-1833.

Research output: Contribution to journalArticle

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