Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities

T. Tawara; H. Kamada; Yong-Hang Zhang; T. Tanabe; N. I. Cade; D. Ding; Shane Johnson; H. Gotoh; E. Kuramochi; M. Notomi; T. Sogawa

doi:10.1364/OE.16.005199

Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities

T. Tawara, H. Kamada, Yong-Hang Zhang, T. Tanabe, N. I. Cade, D. Ding, Shane Johnson, H. Gotoh, E. Kuramochi, M. Notomi, T. Sogawa

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We demonstrate lasing action with a high spontaneous emission factor and temperature insensitivity in InAs/InGaAs quantum dots (QD) embedded in photonic crystal nanocavities. A quality factor (Q) of over 10,000 was achieved by suppressing the material absorption by QDs uncoupled to the cavity mode. High Q cavities exhibited ultra low threshold lasing with a spontaneous emission factor of 0.7. Less frequent carrier escape from the QDs, which was primarily favored by high potential barrier energy, enabled low threshold lasing up to 90 K.

Original language	English (US)
Pages (from-to)	5199-5205
Number of pages	7
Journal	Optics Express
Volume	16
Issue number	8
DOIs	https://doi.org/10.1364/OE.16.005199
State	Published - Apr 14 2008

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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abstract = "We demonstrate lasing action with a high spontaneous emission factor and temperature insensitivity in InAs/InGaAs quantum dots (QD) embedded in photonic crystal nanocavities. A quality factor (Q) of over 10,000 was achieved by suppressing the material absorption by QDs uncoupled to the cavity mode. High Q cavities exhibited ultra low threshold lasing with a spontaneous emission factor of 0.7. Less frequent carrier escape from the QDs, which was primarily favored by high potential barrier energy, enabled low threshold lasing up to 90 K.",

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AU - Tawara, T.

AU - Kamada, H.

AU - Zhang, Yong-Hang

AU - Tanabe, T.

AU - Cade, N. I.

AU - Ding, D.

AU - Johnson, Shane

AU - Gotoh, H.

AU - Kuramochi, E.

AU - Notomi, M.

AU - Sogawa, T.

PY - 2008/4/14

Y1 - 2008/4/14

N2 - We demonstrate lasing action with a high spontaneous emission factor and temperature insensitivity in InAs/InGaAs quantum dots (QD) embedded in photonic crystal nanocavities. A quality factor (Q) of over 10,000 was achieved by suppressing the material absorption by QDs uncoupled to the cavity mode. High Q cavities exhibited ultra low threshold lasing with a spontaneous emission factor of 0.7. Less frequent carrier escape from the QDs, which was primarily favored by high potential barrier energy, enabled low threshold lasing up to 90 K.

AB - We demonstrate lasing action with a high spontaneous emission factor and temperature insensitivity in InAs/InGaAs quantum dots (QD) embedded in photonic crystal nanocavities. A quality factor (Q) of over 10,000 was achieved by suppressing the material absorption by QDs uncoupled to the cavity mode. High Q cavities exhibited ultra low threshold lasing with a spontaneous emission factor of 0.7. Less frequent carrier escape from the QDs, which was primarily favored by high potential barrier energy, enabled low threshold lasing up to 90 K.

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Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities

Abstract

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