Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities

T. Tawara, H. Kamada, Yong-Hang Zhang, T. Tanabe, N. I. Cade, D. Ding, Shane Johnson, H. Gotoh, E. Kuramochi, M. Notomi, T. Sogawa

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

We demonstrate lasing action with a high spontaneous emission factor and temperature insensitivity in InAs/InGaAs quantum dots (QD) embedded in photonic crystal nanocavities. A quality factor (Q) of over 10,000 was achieved by suppressing the material absorption by QDs uncoupled to the cavity mode. High Q cavities exhibited ultra low threshold lasing with a spontaneous emission factor of 0.7. Less frequent carrier escape from the QDs, which was primarily favored by high potential barrier energy, enabled low threshold lasing up to 90 K.

Original languageEnglish (US)
Pages (from-to)5199-5205
Number of pages7
JournalOptics Express
Volume16
Issue number8
DOIs
StatePublished - Apr 14 2008

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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    Tawara, T., Kamada, H., Zhang, Y-H., Tanabe, T., Cade, N. I., Ding, D., Johnson, S., Gotoh, H., Kuramochi, E., Notomi, M., & Sogawa, T. (2008). Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities. Optics Express, 16(8), 5199-5205. https://doi.org/10.1364/OE.16.005199