Pure and doped CeO2 thin films prepared by MOCVD process

M. Pan, G. Y. Meng, H. W. Xin, C. S. Chen, D. K. Peng, Y. S. Lin

Research output: Contribution to journalArticle

65 Citations (Scopus)

Abstract

Using metal β-diketonate precursors, pure CeO2 and yttria doped CeO2 thin films were prepared on different substrates by MOCVD process. The thin films were polycrystalline in the thickness about 2 μm, having the fee fluorite structure. The sizes of crystallite estimated from XRD patterns using Scherrer equation were in the range of 50-80 nm. The Ce/Y ratio in the doped CeO2 thin films was 3.3:1, very close to that in the solid mixed precursor. XPS studies revealed that no carbon impurity is incorporated into the thin films. As-prepared doped CeO2 layers on porous support were promising material for electrolyte and electrode in many electrochemistry process.

Original languageEnglish (US)
Pages (from-to)89-93
Number of pages5
JournalThin Solid Films
Volume324
Issue number1-2
StatePublished - Jul 1 1998
Externally publishedYes

Fingerprint

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Thin films
thin films
Yttrium oxide
Fluorspar
fluorite
Electrochemistry
electrochemistry
Electrolytes
Carbon
X ray photoelectron spectroscopy
Metals
electrolytes
Impurities
impurities
Electrodes
electrodes
carbon
Substrates

Keywords

  • Cerium
  • Organometallic vapor deposition
  • Oxides
  • Yttrium

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Pan, M., Meng, G. Y., Xin, H. W., Chen, C. S., Peng, D. K., & Lin, Y. S. (1998). Pure and doped CeO2 thin films prepared by MOCVD process. Thin Solid Films, 324(1-2), 89-93.

Pure and doped CeO2 thin films prepared by MOCVD process. / Pan, M.; Meng, G. Y.; Xin, H. W.; Chen, C. S.; Peng, D. K.; Lin, Y. S.

In: Thin Solid Films, Vol. 324, No. 1-2, 01.07.1998, p. 89-93.

Research output: Contribution to journalArticle

Pan, M, Meng, GY, Xin, HW, Chen, CS, Peng, DK & Lin, YS 1998, 'Pure and doped CeO2 thin films prepared by MOCVD process', Thin Solid Films, vol. 324, no. 1-2, pp. 89-93.
Pan M, Meng GY, Xin HW, Chen CS, Peng DK, Lin YS. Pure and doped CeO2 thin films prepared by MOCVD process. Thin Solid Films. 1998 Jul 1;324(1-2):89-93.
Pan, M. ; Meng, G. Y. ; Xin, H. W. ; Chen, C. S. ; Peng, D. K. ; Lin, Y. S. / Pure and doped CeO2 thin films prepared by MOCVD process. In: Thin Solid Films. 1998 ; Vol. 324, No. 1-2. pp. 89-93.
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