Pure and doped CeO2 thin films prepared by MOCVD process

M. Pan, G. Y. Meng, H. W. Xin, C. S. Chen, D. K. Peng, Y. S. Lin

Research output: Contribution to journalArticle

67 Scopus citations

Abstract

Using metal β-diketonate precursors, pure CeO2 and yttria doped CeO2 thin films were prepared on different substrates by MOCVD process. The thin films were polycrystalline in the thickness about 2 μm, having the fee fluorite structure. The sizes of crystallite estimated from XRD patterns using Scherrer equation were in the range of 50-80 nm. The Ce/Y ratio in the doped CeO2 thin films was 3.3:1, very close to that in the solid mixed precursor. XPS studies revealed that no carbon impurity is incorporated into the thin films. As-prepared doped CeO2 layers on porous support were promising material for electrolyte and electrode in many electrochemistry process.

Original languageEnglish (US)
Pages (from-to)89-93
Number of pages5
JournalThin Solid Films
Volume324
Issue number1-2
DOIs
StatePublished - Jul 1 1998
Externally publishedYes

Keywords

  • Cerium
  • Organometallic vapor deposition
  • Oxides
  • Yttrium

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Pure and doped CeO<sub>2</sub> thin films prepared by MOCVD process'. Together they form a unique fingerprint.

Cite this