Abstract
Using metal β-diketonate precursors, pure CeO2 and yttria doped CeO2 thin films were prepared on different substrates by MOCVD process. The thin films were polycrystalline in the thickness about 2 μm, having the fee fluorite structure. The sizes of crystallite estimated from XRD patterns using Scherrer equation were in the range of 50-80 nm. The Ce/Y ratio in the doped CeO2 thin films was 3.3:1, very close to that in the solid mixed precursor. XPS studies revealed that no carbon impurity is incorporated into the thin films. As-prepared doped CeO2 layers on porous support were promising material for electrolyte and electrode in many electrochemistry process.
Original language | English (US) |
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Pages (from-to) | 89-93 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 324 |
Issue number | 1-2 |
DOIs | |
State | Published - Jul 1 1998 |
Externally published | Yes |
Keywords
- Cerium
- Organometallic vapor deposition
- Oxides
- Yttrium
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry