Using metal β-diketonate precursors, pure CeO2 and yttria doped CeO2 thin films were prepared on different substrates by MOCVD process. The thin films were polycrystalline in the thickness about 2 μm, having the fee fluorite structure. The sizes of crystallite estimated from XRD patterns using Scherrer equation were in the range of 50-80 nm. The Ce/Y ratio in the doped CeO2 thin films was 3.3:1, very close to that in the solid mixed precursor. XPS studies revealed that no carbon impurity is incorporated into the thin films. As-prepared doped CeO2 layers on porous support were promising material for electrolyte and electrode in many electrochemistry process.
- Organometallic vapor deposition
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry