Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates

Z. Chen; R. S. Qhalid Fareed; M. Gaevski; V. Adivarahan; J. W. Yang; Asif Khan; J. Mei; Fernando Ponce

doi:10.1063/1.2245436

Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates

Z. Chen, R. S. Qhalid Fareed, M. Gaevski, V. Adivarahan, J. W. Yang, Asif Khan, J. Mei, Fernando Ponce

Physics

Research output: Contribution to journal › Article › peer-review

83 Scopus citations

Abstract

The authors report on pulsed lateral epitaxial overgrowth of aluminum nitride films on basal plane sapphire substrates. This approach, at temperatures in excess of 1150 °C, enhanced the adatom migration, thereby significantly increasing the lateral growth rates. This enabled a full coalescence in wing regions as wide as 4-10 μm. Atomic force microscopy and cross-section transmission electron microscopy were used to establish the reduction of threading dislocations in the lateral growth. Cross-sectional monochromatic cathodoluminescence and photoluminescence measurements confirmed the improved optical properties of the laterally overgrown aluminum nitride films.

Original language	English (US)
Article number	081905
Journal	Applied Physics Letters
Volume	89
Issue number	8
DOIs	https://doi.org/10.1063/1.2245436
State	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2245436

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title = "Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates",

abstract = "The authors report on pulsed lateral epitaxial overgrowth of aluminum nitride films on basal plane sapphire substrates. This approach, at temperatures in excess of 1150 °C, enhanced the adatom migration, thereby significantly increasing the lateral growth rates. This enabled a full coalescence in wing regions as wide as 4-10 μm. Atomic force microscopy and cross-section transmission electron microscopy were used to establish the reduction of threading dislocations in the lateral growth. Cross-sectional monochromatic cathodoluminescence and photoluminescence measurements confirmed the improved optical properties of the laterally overgrown aluminum nitride films.",

author = "Z. Chen and {Qhalid Fareed}, {R. S.} and M. Gaevski and V. Adivarahan and Yang, {J. W.} and Asif Khan and J. Mei and Fernando Ponce",

note = "Funding Information: The authors would like to thank M. Shatalov at USC for the PL characterization data. The use of the facilities within the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University is gratefully acknowledged. The authors also thank S. Srinivasan and M. Stevens at ASU for their assistance and helpful discussions. The work at USC was partially supported by DARPA under Grant No. DAAD19-02-1-0282, monitored by H. Temkin (DARPA) and J. Zavada (ARO). ",

year = "2006",

doi = "10.1063/1.2245436",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

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AU - Chen, Z.

AU - Qhalid Fareed, R. S.

AU - Gaevski, M.

AU - Adivarahan, V.

AU - Yang, J. W.

AU - Khan, Asif

AU - Mei, J.

AU - Ponce, Fernando

N1 - Funding Information: The authors would like to thank M. Shatalov at USC for the PL characterization data. The use of the facilities within the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University is gratefully acknowledged. The authors also thank S. Srinivasan and M. Stevens at ASU for their assistance and helpful discussions. The work at USC was partially supported by DARPA under Grant No. DAAD19-02-1-0282, monitored by H. Temkin (DARPA) and J. Zavada (ARO).

PY - 2006

Y1 - 2006

N2 - The authors report on pulsed lateral epitaxial overgrowth of aluminum nitride films on basal plane sapphire substrates. This approach, at temperatures in excess of 1150 °C, enhanced the adatom migration, thereby significantly increasing the lateral growth rates. This enabled a full coalescence in wing regions as wide as 4-10 μm. Atomic force microscopy and cross-section transmission electron microscopy were used to establish the reduction of threading dislocations in the lateral growth. Cross-sectional monochromatic cathodoluminescence and photoluminescence measurements confirmed the improved optical properties of the laterally overgrown aluminum nitride films.

AB - The authors report on pulsed lateral epitaxial overgrowth of aluminum nitride films on basal plane sapphire substrates. This approach, at temperatures in excess of 1150 °C, enhanced the adatom migration, thereby significantly increasing the lateral growth rates. This enabled a full coalescence in wing regions as wide as 4-10 μm. Atomic force microscopy and cross-section transmission electron microscopy were used to establish the reduction of threading dislocations in the lateral growth. Cross-sectional monochromatic cathodoluminescence and photoluminescence measurements confirmed the improved optical properties of the laterally overgrown aluminum nitride films.

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Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates

Abstract

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