Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates

Z. Chen, R. S. Qhalid Fareed, M. Gaevski, V. Adivarahan, J. W. Yang, Asif Khan, J. Mei, Fernando Ponce

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Abstract

The authors report on pulsed lateral epitaxial overgrowth of aluminum nitride films on basal plane sapphire substrates. This approach, at temperatures in excess of 1150 °C, enhanced the adatom migration, thereby significantly increasing the lateral growth rates. This enabled a full coalescence in wing regions as wide as 4-10 μm. Atomic force microscopy and cross-section transmission electron microscopy were used to establish the reduction of threading dislocations in the lateral growth. Cross-sectional monochromatic cathodoluminescence and photoluminescence measurements confirmed the improved optical properties of the laterally overgrown aluminum nitride films.

Original languageEnglish (US)
Article number081905
JournalApplied Physics Letters
Volume89
Issue number8
DOIs
StatePublished - Aug 31 2006

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chen, Z., Qhalid Fareed, R. S., Gaevski, M., Adivarahan, V., Yang, J. W., Khan, A., Mei, J., & Ponce, F. (2006). Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates. Applied Physics Letters, 89(8), [081905]. https://doi.org/10.1063/1.2245436