Pulse width modulation circuit for ISFET drift reset

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

We present the simulation results for a Pulse Width Modulation (PWM) circuit (to be fabricated in a 0.5 μm CMOS process) used to cycle the electric field in an Ion Sensitive Field Effect Transistor (ISFET). Vertical electric field, which controls the inversion layer in a field effect transistors, can be used to reset the inherent drift behavior of ISFET. A PWM circuit, to cycle the vertical field, enables us to precisely monitor the pH of an electrolyte without needing to manually calibrate the ISFET. Two or more ISFETs could be used with the devices alternatively being placed in reset and measurement mode. By combining the outputs from measurement phase of the devices, we can read the pH of the electrolyte continuously. The PWM circuit is composed of a 10.9 kHz ring oscillator, five divider circuits giving a 100,000 frequency division, a 6 bit counter, and a Digital to Analog Converter (DAC) that feeds into a comparator whose output selects the mode of operation for the ISFETs.

Original languageEnglish (US)
Title of host publicationIEEE SENSORS 2013 - Proceedings
PublisherIEEE Computer Society
ISBN (Print)9781467346405
DOIs
StatePublished - Jan 1 2013
Event12th IEEE SENSORS 2013 Conference - Baltimore, MD, United States
Duration: Nov 4 2013Nov 6 2013

Publication series

NameProceedings of IEEE Sensors

Other

Other12th IEEE SENSORS 2013 Conference
CountryUnited States
CityBaltimore, MD
Period11/4/1311/6/13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Pulse width modulation circuit for ISFET drift reset'. Together they form a unique fingerprint.

  • Cite this

    Shah, S., & Blain Christen, J. (2013). Pulse width modulation circuit for ISFET drift reset. In IEEE SENSORS 2013 - Proceedings [6688269] (Proceedings of IEEE Sensors). IEEE Computer Society. https://doi.org/10.1109/ICSENS.2013.6688269