TY - JOUR
T1 - Pulse laser deposition fabricated InP/Al-ZnO heterojunction solar cells with efficiency enhanced by an i-ZnO interlayer
AU - Nian, Qiong
AU - Montgomery, Kyle H.
AU - Zhao, Xin
AU - Jackson, Tom
AU - Woodall, Jerry M.
AU - Cheng, Gary J.
N1 - Publisher Copyright:
© 2015, Springer-Verlag Berlin Heidelberg.
PY - 2015/9/22
Y1 - 2015/9/22
N2 - Indium phosphide (InP) has long since been seen as the ideal material choice for single-junction solar cells given its optimal band gap and high absorption coefficient. We report on the performance of heterojunction solar cells formed by depositing aluminum-doped ZnO (AZO), using pulsed laser deposition for the first time, onto p-type InP substrates. It is also found that a ZnO insulator layer (i-ZnO) between an InP base and AZO emitter can yield higher solar conversion efficiency and quantum efficiency over a baseline AZO/InP device. This 10-nm-thick intrinsic ultra-thin buffer enhanced collection probability but decreased surface recombination rate, which in turn shoot short-circuit current, open-circuit voltage, and fill factor to 17.4 mA/cm2, 0.58 V, and 72.9 %, respectively. A maximum power conversion efficiency of 7.3 % was realized by intergrading i-ZnO, which is ~20 % higher than baseline AZO/InP device of 6.1 %. This is also the record for this type of cell structure, using AZO as the emitter.
AB - Indium phosphide (InP) has long since been seen as the ideal material choice for single-junction solar cells given its optimal band gap and high absorption coefficient. We report on the performance of heterojunction solar cells formed by depositing aluminum-doped ZnO (AZO), using pulsed laser deposition for the first time, onto p-type InP substrates. It is also found that a ZnO insulator layer (i-ZnO) between an InP base and AZO emitter can yield higher solar conversion efficiency and quantum efficiency over a baseline AZO/InP device. This 10-nm-thick intrinsic ultra-thin buffer enhanced collection probability but decreased surface recombination rate, which in turn shoot short-circuit current, open-circuit voltage, and fill factor to 17.4 mA/cm2, 0.58 V, and 72.9 %, respectively. A maximum power conversion efficiency of 7.3 % was realized by intergrading i-ZnO, which is ~20 % higher than baseline AZO/InP device of 6.1 %. This is also the record for this type of cell structure, using AZO as the emitter.
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U2 - 10.1007/s00339-015-9493-5
DO - 10.1007/s00339-015-9493-5
M3 - Article
AN - SCOPUS:84947018715
SN - 0947-8396
VL - 121
SP - 1219
EP - 1226
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 3
ER -