Pulse laser deposition fabricated InP/Al-ZnO heterojunction solar cells with efficiency enhanced by an i-ZnO interlayer

Qiong Nian, Kyle H. Montgomery, Xin Zhao, Tom Jackson, Jerry M. Woodall, Gary J. Cheng

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Indium phosphide (InP) has long since been seen as the ideal material choice for single-junction solar cells given its optimal band gap and high absorption coefficient. We report on the performance of heterojunction solar cells formed by depositing aluminum-doped ZnO (AZO), using pulsed laser deposition for the first time, onto p-type InP substrates. It is also found that a ZnO insulator layer (i-ZnO) between an InP base and AZO emitter can yield higher solar conversion efficiency and quantum efficiency over a baseline AZO/InP device. This 10-nm-thick intrinsic ultra-thin buffer enhanced collection probability but decreased surface recombination rate, which in turn shoot short-circuit current, open-circuit voltage, and fill factor to 17.4 mA/cm2, 0.58 V, and 72.9 %, respectively. A maximum power conversion efficiency of 7.3 % was realized by intergrading i-ZnO, which is ~20 % higher than baseline AZO/InP device of 6.1 %. This is also the record for this type of cell structure, using AZO as the emitter.

Original languageEnglish (US)
Pages (from-to)1219-1226
Number of pages8
JournalApplied Physics A: Materials Science and Processing
Volume121
Issue number3
DOIs
StatePublished - Sep 22 2015
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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