Pulse laser deposition fabricated InP/Al-ZnO heterojunction solar cells with efficiency enhanced by an i-ZnO interlayer

Qiong Nian, Kyle H. Montgomery, Xin Zhao, Tom Jackson, Jerry M. Woodall, Gary J. Cheng

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Indium phosphide (InP) has long since been seen as the ideal material choice for single-junction solar cells given its optimal band gap and high absorption coefficient. We report on the performance of heterojunction solar cells formed by depositing aluminum-doped ZnO (AZO), using pulsed laser deposition for the first time, onto p-type InP substrates. It is also found that a ZnO insulator layer (i-ZnO) between an InP base and AZO emitter can yield higher solar conversion efficiency and quantum efficiency over a baseline AZO/InP device. This 10-nm-thick intrinsic ultra-thin buffer enhanced collection probability but decreased surface recombination rate, which in turn shoot short-circuit current, open-circuit voltage, and fill factor to 17.4 mA/cm2, 0.58 V, and 72.9 %, respectively. A maximum power conversion efficiency of 7.3 % was realized by intergrading i-ZnO, which is ~20 % higher than baseline AZO/InP device of 6.1 %. This is also the record for this type of cell structure, using AZO as the emitter.

Original languageEnglish (US)
Pages (from-to)1219-1226
Number of pages8
JournalApplied Physics A: Materials Science and Processing
Volume121
Issue number3
DOIs
StatePublished - Sep 22 2015
Externally publishedYes

Fingerprint

Indium phosphide
laser deposition
indium phosphides
Aluminum
Heterojunctions
heterojunctions
interlayers
Laser pulses
Solar cells
solar cells
aluminum
pulses
Conversion efficiency
emitters
Open circuit voltage
short circuit currents
Pulsed laser deposition
open circuit voltage
Quantum efficiency
Short circuit currents

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

Cite this

Pulse laser deposition fabricated InP/Al-ZnO heterojunction solar cells with efficiency enhanced by an i-ZnO interlayer. / Nian, Qiong; Montgomery, Kyle H.; Zhao, Xin; Jackson, Tom; Woodall, Jerry M.; Cheng, Gary J.

In: Applied Physics A: Materials Science and Processing, Vol. 121, No. 3, 22.09.2015, p. 1219-1226.

Research output: Contribution to journalArticle

Nian, Qiong ; Montgomery, Kyle H. ; Zhao, Xin ; Jackson, Tom ; Woodall, Jerry M. ; Cheng, Gary J. / Pulse laser deposition fabricated InP/Al-ZnO heterojunction solar cells with efficiency enhanced by an i-ZnO interlayer. In: Applied Physics A: Materials Science and Processing. 2015 ; Vol. 121, No. 3. pp. 1219-1226.
@article{81030bfe2537494c8bef0ad0fb1648a5,
title = "Pulse laser deposition fabricated InP/Al-ZnO heterojunction solar cells with efficiency enhanced by an i-ZnO interlayer",
abstract = "Indium phosphide (InP) has long since been seen as the ideal material choice for single-junction solar cells given its optimal band gap and high absorption coefficient. We report on the performance of heterojunction solar cells formed by depositing aluminum-doped ZnO (AZO), using pulsed laser deposition for the first time, onto p-type InP substrates. It is also found that a ZnO insulator layer (i-ZnO) between an InP base and AZO emitter can yield higher solar conversion efficiency and quantum efficiency over a baseline AZO/InP device. This 10-nm-thick intrinsic ultra-thin buffer enhanced collection probability but decreased surface recombination rate, which in turn shoot short-circuit current, open-circuit voltage, and fill factor to 17.4 mA/cm2, 0.58 V, and 72.9 {\%}, respectively. A maximum power conversion efficiency of 7.3 {\%} was realized by intergrading i-ZnO, which is ~20 {\%} higher than baseline AZO/InP device of 6.1 {\%}. This is also the record for this type of cell structure, using AZO as the emitter.",
author = "Qiong Nian and Montgomery, {Kyle H.} and Xin Zhao and Tom Jackson and Woodall, {Jerry M.} and Cheng, {Gary J.}",
year = "2015",
month = "9",
day = "22",
doi = "10.1007/s00339-015-9493-5",
language = "English (US)",
volume = "121",
pages = "1219--1226",
journal = "Applied Physics",
issn = "0340-3793",
publisher = "Springer Heidelberg",
number = "3",

}

TY - JOUR

T1 - Pulse laser deposition fabricated InP/Al-ZnO heterojunction solar cells with efficiency enhanced by an i-ZnO interlayer

AU - Nian, Qiong

AU - Montgomery, Kyle H.

AU - Zhao, Xin

AU - Jackson, Tom

AU - Woodall, Jerry M.

AU - Cheng, Gary J.

PY - 2015/9/22

Y1 - 2015/9/22

N2 - Indium phosphide (InP) has long since been seen as the ideal material choice for single-junction solar cells given its optimal band gap and high absorption coefficient. We report on the performance of heterojunction solar cells formed by depositing aluminum-doped ZnO (AZO), using pulsed laser deposition for the first time, onto p-type InP substrates. It is also found that a ZnO insulator layer (i-ZnO) between an InP base and AZO emitter can yield higher solar conversion efficiency and quantum efficiency over a baseline AZO/InP device. This 10-nm-thick intrinsic ultra-thin buffer enhanced collection probability but decreased surface recombination rate, which in turn shoot short-circuit current, open-circuit voltage, and fill factor to 17.4 mA/cm2, 0.58 V, and 72.9 %, respectively. A maximum power conversion efficiency of 7.3 % was realized by intergrading i-ZnO, which is ~20 % higher than baseline AZO/InP device of 6.1 %. This is also the record for this type of cell structure, using AZO as the emitter.

AB - Indium phosphide (InP) has long since been seen as the ideal material choice for single-junction solar cells given its optimal band gap and high absorption coefficient. We report on the performance of heterojunction solar cells formed by depositing aluminum-doped ZnO (AZO), using pulsed laser deposition for the first time, onto p-type InP substrates. It is also found that a ZnO insulator layer (i-ZnO) between an InP base and AZO emitter can yield higher solar conversion efficiency and quantum efficiency over a baseline AZO/InP device. This 10-nm-thick intrinsic ultra-thin buffer enhanced collection probability but decreased surface recombination rate, which in turn shoot short-circuit current, open-circuit voltage, and fill factor to 17.4 mA/cm2, 0.58 V, and 72.9 %, respectively. A maximum power conversion efficiency of 7.3 % was realized by intergrading i-ZnO, which is ~20 % higher than baseline AZO/InP device of 6.1 %. This is also the record for this type of cell structure, using AZO as the emitter.

UR - http://www.scopus.com/inward/record.url?scp=84947018715&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84947018715&partnerID=8YFLogxK

U2 - 10.1007/s00339-015-9493-5

DO - 10.1007/s00339-015-9493-5

M3 - Article

AN - SCOPUS:84947018715

VL - 121

SP - 1219

EP - 1226

JO - Applied Physics

JF - Applied Physics

SN - 0340-3793

IS - 3

ER -