Proton radiation effects on the photoluminescence of infrared InAs/InAsSb superlattices

Elizabeth H. Steenbergen, Jeremy A. Massengale, Vincent M. Cowan, Zhiyuan Lin, Yong-Hang Zhang, Christian P. Morath

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Infrared detector arrays operating in space must be able to withstand defect-inducing proton radiation without performance degradation. Therefore, it is imperative that the proton-radiation hardness of infrared detector materials be investigated. Photoluminescence (PL) is sensitive to defects in materials, and thus can be used to quantify the effects of proton-radiation-induced defects. The excitation intensity-dependent PL was used to examine of a set of InAs/InAsSb superlattices before and after 63-MeV-proton irradiation. A proton dose of 100 kRad(Si) was applied to a different piece of each superlattice sample. The low-temperature excitation intensity dependent PL results reveal minimal increases in the carrier concentration, non-radiative recombination, and the PL full-width half-maximum. These results suggest that InAs/InAsSb superlattices are quite tolerant of proton irradiation and may be suitable for space infrared detector arrays.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume8876
DOIs
StatePublished - 2013
Event7th Nanophotonics and Macrophotonics for Space Environments Conference, NMSE 2013 - San Diego, CA, United States
Duration: Aug 25 2013Aug 27 2013

Other

Other7th Nanophotonics and Macrophotonics for Space Environments Conference, NMSE 2013
CountryUnited States
CitySan Diego, CA
Period8/25/138/27/13

Fingerprint

Radiation Effects
Superlattices
Radiation effects
Photoluminescence
radiation effects
Infrared Detectors
Infrared detectors
superlattices
Protons
infrared detectors
Infrared
Infrared radiation
photoluminescence
Proton irradiation
proton irradiation
protons
Defects
Radiation
Irradiation
defects

Keywords

  • Excitation Intensity-Dependence
  • Infrared Superlattice
  • Photoluminescence
  • Proton Radiation

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Steenbergen, E. H., Massengale, J. A., Cowan, V. M., Lin, Z., Zhang, Y-H., & Morath, C. P. (2013). Proton radiation effects on the photoluminescence of infrared InAs/InAsSb superlattices. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8876). [887609] https://doi.org/10.1117/12.2026872

Proton radiation effects on the photoluminescence of infrared InAs/InAsSb superlattices. / Steenbergen, Elizabeth H.; Massengale, Jeremy A.; Cowan, Vincent M.; Lin, Zhiyuan; Zhang, Yong-Hang; Morath, Christian P.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8876 2013. 887609.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Steenbergen, EH, Massengale, JA, Cowan, VM, Lin, Z, Zhang, Y-H & Morath, CP 2013, Proton radiation effects on the photoluminescence of infrared InAs/InAsSb superlattices. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8876, 887609, 7th Nanophotonics and Macrophotonics for Space Environments Conference, NMSE 2013, San Diego, CA, United States, 8/25/13. https://doi.org/10.1117/12.2026872
Steenbergen EH, Massengale JA, Cowan VM, Lin Z, Zhang Y-H, Morath CP. Proton radiation effects on the photoluminescence of infrared InAs/InAsSb superlattices. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8876. 2013. 887609 https://doi.org/10.1117/12.2026872
Steenbergen, Elizabeth H. ; Massengale, Jeremy A. ; Cowan, Vincent M. ; Lin, Zhiyuan ; Zhang, Yong-Hang ; Morath, Christian P. / Proton radiation effects on the photoluminescence of infrared InAs/InAsSb superlattices. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8876 2013.
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