Proton irradiation effects on AlN/GaN high electron mobility transistors

C. F. Lo, C. Y. Chang, B. H. Chu, H. Y. Kim, J. Kim, David A. Cullen, Lin Zhou, David Smith, S. J. Pearton, Amir Dabiran, B. Cui, P. P. Chow, S. Jang, F. Ren

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

AlN/GaN high electron mobility transistors (HEMTs) were irradiated with 5 MeV protons at fluences from 2 × 1011 to 2 × 10 15 protons/cm2. Changes from 10% to 35% of the saturation drain current and the source-drain resistances were observed for the HEMTs exposed to the proton irradiations due to radiation-induced carrier scattering and carrier removal. Both forward and reverse bias gate currents were increased after proton irradiation and affected the drain current modulation in the positive gate bias voltage range. There was almost no gate-lag observed for the HEMT exposed to 2 × 1011 protons/ cm2 irradiation and minimal changes for the higher doses, which implied that few surface traps were created by the high energy proton irradiation.

Original languageEnglish (US)
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume28
Issue number5
DOIs
StatePublished - 2010

Fingerprint

Proton irradiation
proton irradiation
High electron mobility transistors
high electron mobility transistors
Drain current
Protons
protons
Bias voltage
fluence
time lag
Modulation
traps
Scattering
saturation
modulation
Radiation
dosage
electric potential
radiation
scattering

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Proton irradiation effects on AlN/GaN high electron mobility transistors. / Lo, C. F.; Chang, C. Y.; Chu, B. H.; Kim, H. Y.; Kim, J.; Cullen, David A.; Zhou, Lin; Smith, David; Pearton, S. J.; Dabiran, Amir; Cui, B.; Chow, P. P.; Jang, S.; Ren, F.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 28, No. 5, 2010.

Research output: Contribution to journalArticle

Lo, CF, Chang, CY, Chu, BH, Kim, HY, Kim, J, Cullen, DA, Zhou, L, Smith, D, Pearton, SJ, Dabiran, A, Cui, B, Chow, PP, Jang, S & Ren, F 2010, 'Proton irradiation effects on AlN/GaN high electron mobility transistors', Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, vol. 28, no. 5. https://doi.org/10.1116/1.3482335
Lo, C. F. ; Chang, C. Y. ; Chu, B. H. ; Kim, H. Y. ; Kim, J. ; Cullen, David A. ; Zhou, Lin ; Smith, David ; Pearton, S. J. ; Dabiran, Amir ; Cui, B. ; Chow, P. P. ; Jang, S. ; Ren, F. / Proton irradiation effects on AlN/GaN high electron mobility transistors. In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 2010 ; Vol. 28, No. 5.
@article{509c0d64cae046eabeb2438a422210b8,
title = "Proton irradiation effects on AlN/GaN high electron mobility transistors",
abstract = "AlN/GaN high electron mobility transistors (HEMTs) were irradiated with 5 MeV protons at fluences from 2 × 1011 to 2 × 10 15 protons/cm2. Changes from 10{\%} to 35{\%} of the saturation drain current and the source-drain resistances were observed for the HEMTs exposed to the proton irradiations due to radiation-induced carrier scattering and carrier removal. Both forward and reverse bias gate currents were increased after proton irradiation and affected the drain current modulation in the positive gate bias voltage range. There was almost no gate-lag observed for the HEMT exposed to 2 × 1011 protons/ cm2 irradiation and minimal changes for the higher doses, which implied that few surface traps were created by the high energy proton irradiation.",
author = "Lo, {C. F.} and Chang, {C. Y.} and Chu, {B. H.} and Kim, {H. Y.} and J. Kim and Cullen, {David A.} and Lin Zhou and David Smith and Pearton, {S. J.} and Amir Dabiran and B. Cui and Chow, {P. P.} and S. Jang and F. Ren",
year = "2010",
doi = "10.1116/1.3482335",
language = "English (US)",
volume = "28",
journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",
issn = "2166-2746",
publisher = "AVS Science and Technology Society",
number = "5",

}

TY - JOUR

T1 - Proton irradiation effects on AlN/GaN high electron mobility transistors

AU - Lo, C. F.

AU - Chang, C. Y.

AU - Chu, B. H.

AU - Kim, H. Y.

AU - Kim, J.

AU - Cullen, David A.

AU - Zhou, Lin

AU - Smith, David

AU - Pearton, S. J.

AU - Dabiran, Amir

AU - Cui, B.

AU - Chow, P. P.

AU - Jang, S.

AU - Ren, F.

PY - 2010

Y1 - 2010

N2 - AlN/GaN high electron mobility transistors (HEMTs) were irradiated with 5 MeV protons at fluences from 2 × 1011 to 2 × 10 15 protons/cm2. Changes from 10% to 35% of the saturation drain current and the source-drain resistances were observed for the HEMTs exposed to the proton irradiations due to radiation-induced carrier scattering and carrier removal. Both forward and reverse bias gate currents were increased after proton irradiation and affected the drain current modulation in the positive gate bias voltage range. There was almost no gate-lag observed for the HEMT exposed to 2 × 1011 protons/ cm2 irradiation and minimal changes for the higher doses, which implied that few surface traps were created by the high energy proton irradiation.

AB - AlN/GaN high electron mobility transistors (HEMTs) were irradiated with 5 MeV protons at fluences from 2 × 1011 to 2 × 10 15 protons/cm2. Changes from 10% to 35% of the saturation drain current and the source-drain resistances were observed for the HEMTs exposed to the proton irradiations due to radiation-induced carrier scattering and carrier removal. Both forward and reverse bias gate currents were increased after proton irradiation and affected the drain current modulation in the positive gate bias voltage range. There was almost no gate-lag observed for the HEMT exposed to 2 × 1011 protons/ cm2 irradiation and minimal changes for the higher doses, which implied that few surface traps were created by the high energy proton irradiation.

UR - http://www.scopus.com/inward/record.url?scp=77957741389&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957741389&partnerID=8YFLogxK

U2 - 10.1116/1.3482335

DO - 10.1116/1.3482335

M3 - Article

AN - SCOPUS:77957741389

VL - 28

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 5

ER -