Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors

Xinwen Hu, Bo K. Choi, Hugh Barnaby, Daniel M. Fleetwood, Ronald D. Schrimpf, Kenneth F. Galloway, Robert A. Weller, Kyle McDonald, Umesh K. Mishra, Ross W. Dettmer

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The effects of 1.8-MeV and 105-MeV proton irradiation on AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are reported. For 1.8-MeV protons, the degradation of the transistors is caused by an increase in the base current and a large decrease in the collector current. The device degradation is much less after irradiation with 105-MeV protons, because of lower nonionizing energy loss (NIEL) in the sensitive region of the device. There is no improvement in device performance after three months of room temperature annealing.

Original languageEnglish (US)
Pages (from-to)3213-3216
Number of pages4
JournalIEEE Transactions on Nuclear Science
Volume49 I
Issue number6
DOIs
StatePublished - Dec 2002
Externally publishedYes

Fingerprint

Heterojunction bipolar transistors
bipolar transistors
aluminum gallium arsenides
heterojunctions
Protons
degradation
Proton irradiation
Degradation
protons
Energy dissipation
Transistors
proton irradiation
Irradiation
Annealing
accumulators
transistors
energy dissipation
irradiation
annealing
room temperature

Keywords

  • Displacement damage
  • GaAs
  • Heterojunction bipolar transistors (UBTs)
  • Nonionizing energy loss (NIEL)
  • Proton radiation effects

ASJC Scopus subject areas

  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Hu, X., Choi, B. K., Barnaby, H., Fleetwood, D. M., Schrimpf, R. D., Galloway, K. F., ... Dettmer, R. W. (2002). Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors. IEEE Transactions on Nuclear Science, 49 I(6), 3213-3216. https://doi.org/10.1109/TNS.2002.805399

Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors. / Hu, Xinwen; Choi, Bo K.; Barnaby, Hugh; Fleetwood, Daniel M.; Schrimpf, Ronald D.; Galloway, Kenneth F.; Weller, Robert A.; McDonald, Kyle; Mishra, Umesh K.; Dettmer, Ross W.

In: IEEE Transactions on Nuclear Science, Vol. 49 I, No. 6, 12.2002, p. 3213-3216.

Research output: Contribution to journalArticle

Hu, X, Choi, BK, Barnaby, H, Fleetwood, DM, Schrimpf, RD, Galloway, KF, Weller, RA, McDonald, K, Mishra, UK & Dettmer, RW 2002, 'Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors', IEEE Transactions on Nuclear Science, vol. 49 I, no. 6, pp. 3213-3216. https://doi.org/10.1109/TNS.2002.805399
Hu, Xinwen ; Choi, Bo K. ; Barnaby, Hugh ; Fleetwood, Daniel M. ; Schrimpf, Ronald D. ; Galloway, Kenneth F. ; Weller, Robert A. ; McDonald, Kyle ; Mishra, Umesh K. ; Dettmer, Ross W. / Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors. In: IEEE Transactions on Nuclear Science. 2002 ; Vol. 49 I, No. 6. pp. 3213-3216.
@article{ddc64f41bce14a8aaac9168aea84ffcc,
title = "Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors",
abstract = "The effects of 1.8-MeV and 105-MeV proton irradiation on AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are reported. For 1.8-MeV protons, the degradation of the transistors is caused by an increase in the base current and a large decrease in the collector current. The device degradation is much less after irradiation with 105-MeV protons, because of lower nonionizing energy loss (NIEL) in the sensitive region of the device. There is no improvement in device performance after three months of room temperature annealing.",
keywords = "Displacement damage, GaAs, Heterojunction bipolar transistors (UBTs), Nonionizing energy loss (NIEL), Proton radiation effects",
author = "Xinwen Hu and Choi, {Bo K.} and Hugh Barnaby and Fleetwood, {Daniel M.} and Schrimpf, {Ronald D.} and Galloway, {Kenneth F.} and Weller, {Robert A.} and Kyle McDonald and Mishra, {Umesh K.} and Dettmer, {Ross W.}",
year = "2002",
month = "12",
doi = "10.1109/TNS.2002.805399",
language = "English (US)",
volume = "49 I",
pages = "3213--3216",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

TY - JOUR

T1 - Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors

AU - Hu, Xinwen

AU - Choi, Bo K.

AU - Barnaby, Hugh

AU - Fleetwood, Daniel M.

AU - Schrimpf, Ronald D.

AU - Galloway, Kenneth F.

AU - Weller, Robert A.

AU - McDonald, Kyle

AU - Mishra, Umesh K.

AU - Dettmer, Ross W.

PY - 2002/12

Y1 - 2002/12

N2 - The effects of 1.8-MeV and 105-MeV proton irradiation on AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are reported. For 1.8-MeV protons, the degradation of the transistors is caused by an increase in the base current and a large decrease in the collector current. The device degradation is much less after irradiation with 105-MeV protons, because of lower nonionizing energy loss (NIEL) in the sensitive region of the device. There is no improvement in device performance after three months of room temperature annealing.

AB - The effects of 1.8-MeV and 105-MeV proton irradiation on AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are reported. For 1.8-MeV protons, the degradation of the transistors is caused by an increase in the base current and a large decrease in the collector current. The device degradation is much less after irradiation with 105-MeV protons, because of lower nonionizing energy loss (NIEL) in the sensitive region of the device. There is no improvement in device performance after three months of room temperature annealing.

KW - Displacement damage

KW - GaAs

KW - Heterojunction bipolar transistors (UBTs)

KW - Nonionizing energy loss (NIEL)

KW - Proton radiation effects

UR - http://www.scopus.com/inward/record.url?scp=0036956334&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036956334&partnerID=8YFLogxK

U2 - 10.1109/TNS.2002.805399

DO - 10.1109/TNS.2002.805399

M3 - Article

AN - SCOPUS:0036956334

VL - 49 I

SP - 3213

EP - 3216

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 6

ER -