Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors

Xinwen Hu; Bo K. Choi; Hugh J. Barnaby; Daniel M. Fleetwood; Ronald D. Schrimpf; Kenneth F. Galloway; Robert A. Weller; Kyle McDonald; Umesh K. Mishra; Ross W. Dettmer

doi:10.1109/TNS.2002.805399

Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors

Xinwen Hu, Bo K. Choi, Hugh J. Barnaby, Daniel M. Fleetwood, Ronald D. Schrimpf, Kenneth F. Galloway, Robert A. Weller, Kyle McDonald, Umesh K. Mishra, Ross W. Dettmer

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The effects of 1.8-MeV and 105-MeV proton irradiation on AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are reported. For 1.8-MeV protons, the degradation of the transistors is caused by an increase in the base current and a large decrease in the collector current. The device degradation is much less after irradiation with 105-MeV protons, because of lower nonionizing energy loss (NIEL) in the sensitive region of the device. There is no improvement in device performance after three months of room temperature annealing.

Original language	English (US)
Pages (from-to)	3213-3216
Number of pages	4
Journal	IEEE Transactions on Nuclear Science
Volume	49 I
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2002.805399
State	Published - Dec 2002
Externally published	Yes

Keywords

Displacement damage
GaAs
Heterojunction bipolar transistors (UBTs)
Nonionizing energy loss (NIEL)
Proton radiation effects

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2002.805399

Cite this

@article{ddc64f41bce14a8aaac9168aea84ffcc,

title = "Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors",

abstract = "The effects of 1.8-MeV and 105-MeV proton irradiation on AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are reported. For 1.8-MeV protons, the degradation of the transistors is caused by an increase in the base current and a large decrease in the collector current. The device degradation is much less after irradiation with 105-MeV protons, because of lower nonionizing energy loss (NIEL) in the sensitive region of the device. There is no improvement in device performance after three months of room temperature annealing.",

keywords = "Displacement damage, GaAs, Heterojunction bipolar transistors (UBTs), Nonionizing energy loss (NIEL), Proton radiation effects",

author = "Xinwen Hu and Choi, {Bo K.} and Barnaby, {Hugh J.} and Fleetwood, {Daniel M.} and Schrimpf, {Ronald D.} and Galloway, {Kenneth F.} and Weller, {Robert A.} and Kyle McDonald and Mishra, {Umesh K.} and Dettmer, {Ross W.}",

note = "Funding Information: The authors thank E. Blackmore for proton irradiation and the Air Force Office of Scientific Research MURI program for funding support.",

year = "2002",

month = dec,

doi = "10.1109/TNS.2002.805399",

language = "English (US)",

volume = "49 I",

pages = "3213--3216",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors

AU - Hu, Xinwen

AU - Choi, Bo K.

AU - Barnaby, Hugh J.

AU - Fleetwood, Daniel M.

AU - Schrimpf, Ronald D.

AU - Galloway, Kenneth F.

AU - Weller, Robert A.

AU - McDonald, Kyle

AU - Mishra, Umesh K.

AU - Dettmer, Ross W.

N1 - Funding Information: The authors thank E. Blackmore for proton irradiation and the Air Force Office of Scientific Research MURI program for funding support.

PY - 2002/12

Y1 - 2002/12

N2 - The effects of 1.8-MeV and 105-MeV proton irradiation on AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are reported. For 1.8-MeV protons, the degradation of the transistors is caused by an increase in the base current and a large decrease in the collector current. The device degradation is much less after irradiation with 105-MeV protons, because of lower nonionizing energy loss (NIEL) in the sensitive region of the device. There is no improvement in device performance after three months of room temperature annealing.

AB - The effects of 1.8-MeV and 105-MeV proton irradiation on AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are reported. For 1.8-MeV protons, the degradation of the transistors is caused by an increase in the base current and a large decrease in the collector current. The device degradation is much less after irradiation with 105-MeV protons, because of lower nonionizing energy loss (NIEL) in the sensitive region of the device. There is no improvement in device performance after three months of room temperature annealing.

KW - Displacement damage

KW - GaAs

KW - Heterojunction bipolar transistors (UBTs)

KW - Nonionizing energy loss (NIEL)

KW - Proton radiation effects

UR - http://www.scopus.com/inward/record.url?scp=0036956334&partnerID=8YFLogxK

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U2 - 10.1109/TNS.2002.805399

DO - 10.1109/TNS.2002.805399

M3 - Article

AN - SCOPUS:0036956334

SN - 0018-9499

VL - 49 I

SP - 3213

EP - 3216

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6

ER -

Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors

Abstract

Keywords

ASJC Scopus subject areas

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