Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors

Xinwen Hu, Bo K. Choi, Hugh J. Barnaby, Daniel M. Fleetwood, Ronald D. Schrimpf, Kenneth F. Galloway, Robert A. Weller, Kyle McDonald, Umesh K. Mishra, Ross W. Dettmer

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The effects of 1.8-MeV and 105-MeV proton irradiation on AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are reported. For 1.8-MeV protons, the degradation of the transistors is caused by an increase in the base current and a large decrease in the collector current. The device degradation is much less after irradiation with 105-MeV protons, because of lower nonionizing energy loss (NIEL) in the sensitive region of the device. There is no improvement in device performance after three months of room temperature annealing.

Original languageEnglish (US)
Pages (from-to)3213-3216
Number of pages4
JournalIEEE Transactions on Nuclear Science
Volume49 I
Issue number6
DOIs
StatePublished - Dec 1 2002
Externally publishedYes

Keywords

  • Displacement damage
  • GaAs
  • Heterojunction bipolar transistors (UBTs)
  • Nonionizing energy loss (NIEL)
  • Proton radiation effects

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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