Properties of zirconium doped Sr-Bi-Ta-O thin films

Robert Barz, Deborah A. Neumayer, Sandwip Dey

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Strontium bismuth tantalate (SrBi 2.2Ta 2O 9, SBT) thin films with 1,3, and 8% zirconium content were prepared on Pt/SiO 2/Si substrates by chemical solution deposition using a butoxyethanol/ethylhexanoate chemistry. SIMS analysis revealed a uniform distribution of zirconium throughout the doped films. The X-ray diffraction patterns and scanning electron images indicated that the films were polycrystalline and phase pure, except for the 8% Zr composition. An additional diffraction peak, attributed to zirconium oxide, was observed in the 8% Zr thin film. In this composition, the capacitors exhibited low resistance and an absence of ferroelectricity. The measured 2Pr values at 3 V were 11.2, 3.2, and 1.7 μC/cm 2 for the 0, 1, and 3% Zr SBT thin films, respectively. The physical and electrical characterization data indicated that zirconium is incorporated in the SBT lattice at amounts up to 3%, but less than 8%.

Original languageEnglish (US)
Title of host publicationIntegrated Ferroelectrics
Pages287-297
Number of pages11
Volume25
Edition1-4
StatePublished - 1999

Keywords

  • Ferroelectric thin films
  • SBT
  • Sr Bi Ta O

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Barz, R., Neumayer, D. A., & Dey, S. (1999). Properties of zirconium doped Sr-Bi-Ta-O thin films. In Integrated Ferroelectrics (1-4 ed., Vol. 25, pp. 287-297)