Properties of the shallow O-related acceptor level in ZnSe

Physics & Astronomy

• molecular beam epitaxy 100%
• luminescence 89%
• excitation 85%
• zinc selenides 82%
• impurities 77%
• contaminants 60%
• secondary ion mass spectrometry 60%
• conduction bands 50%
• binding energy 50%
• photoluminescence 41%
• reflectance 41%
• conduction 39%
• ground state 38%
• temperature 34%
• energy 34%
• lasers 25%