Properties of the shallow O-related acceptor level in ZnSe

J. Chen, Yong-Hang Zhang, Brian Skromme, K. Akimoto, S. J. Pachuta

Research output: Contribution to journalArticle

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Abstract

Zinc selenide layers grown by molecular beam epitaxy (MBE) and doped with ZnO have been characterized using low temperature photoluminescence (PL) measurements as a function of excitation level, temperature, and laser energy (i.e., selectively excited donor-acceptor pair luminescence or SPL), as well as reflectance measurements. An O-related donor-to-acceptor (D0-A 0) pair band is clearly observed in all of the ZnO-doped layers, whose position varies from 2.7196 to 2.7304 eV, depending on the excitation level. The same peak occurs in a number of undoped, As-doped, and Ga-doped MBE samples, showing that O can occur as a residual impurity. Temperature-dependent measurements reveal the existence of a corresponding conduction band-to-acceptor (e-A0) peak at 2.7372 eV (39.8 K), confirming the existence of the acceptor level. The binding energy of this acceptor is about 84±2 meV, which is 27 meV shallower than that of N. The SPL measurements reveal four excited states of the shallow acceptor level, separated from the 1s 3/2 ground state by 48.2 (2p3/2), 57.1 (2s3/2), 64.3 (2p5/27), and 67.7 meV (3p 3/28), respectively (all values ±1 meV). These energies fit well to conventional effective mass theory, which demonstrates that this O-related acceptor level is effective-mass-like. However, luminescence and secondary ion mass spectrometry show that the ZnO doping technique introduces shallow donor impurities into the material in addition to O acceptors, specifically high levels of chemical contaminants (mainly B and Ga) originating from the doping source. This effect may account for the lack of reproducibility in obtaining p-type conduction with ZnO doping, and suggests that more effective O incorporation methods should be devised.

Original languageEnglish (US)
Pages (from-to)5109-5119
Number of pages11
JournalJournal of Applied Physics
Volume78
Issue number8
DOIs
StatePublished - 1995

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molecular beam epitaxy
luminescence
excitation
zinc selenides
impurities
secondary ion mass spectrometry
contaminants
conduction bands
binding energy
reflectance
photoluminescence
conduction
ground state
temperature
energy
lasers

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Properties of the shallow O-related acceptor level in ZnSe. / Chen, J.; Zhang, Yong-Hang; Skromme, Brian; Akimoto, K.; Pachuta, S. J.

In: Journal of Applied Physics, Vol. 78, No. 8, 1995, p. 5109-5119.

Research output: Contribution to journalArticle

Chen, J. ; Zhang, Yong-Hang ; Skromme, Brian ; Akimoto, K. ; Pachuta, S. J. / Properties of the shallow O-related acceptor level in ZnSe. In: Journal of Applied Physics. 1995 ; Vol. 78, No. 8. pp. 5109-5119.
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abstract = "Zinc selenide layers grown by molecular beam epitaxy (MBE) and doped with ZnO have been characterized using low temperature photoluminescence (PL) measurements as a function of excitation level, temperature, and laser energy (i.e., selectively excited donor-acceptor pair luminescence or SPL), as well as reflectance measurements. An O-related donor-to-acceptor (D0-A 0) pair band is clearly observed in all of the ZnO-doped layers, whose position varies from 2.7196 to 2.7304 eV, depending on the excitation level. The same peak occurs in a number of undoped, As-doped, and Ga-doped MBE samples, showing that O can occur as a residual impurity. Temperature-dependent measurements reveal the existence of a corresponding conduction band-to-acceptor (e-A0) peak at 2.7372 eV (39.8 K), confirming the existence of the acceptor level. The binding energy of this acceptor is about 84±2 meV, which is 27 meV shallower than that of N. The SPL measurements reveal four excited states of the shallow acceptor level, separated from the 1s 3/2 ground state by 48.2 (2p3/2), 57.1 (2s3/2), 64.3 (2p5/2:Γ7), and 67.7 meV (3p 3/2:Γ8), respectively (all values ±1 meV). These energies fit well to conventional effective mass theory, which demonstrates that this O-related acceptor level is effective-mass-like. However, luminescence and secondary ion mass spectrometry show that the ZnO doping technique introduces shallow donor impurities into the material in addition to O acceptors, specifically high levels of chemical contaminants (mainly B and Ga) originating from the doping source. This effect may account for the lack of reproducibility in obtaining p-type conduction with ZnO doping, and suggests that more effective O incorporation methods should be devised.",
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