PROPERTIES OF THE INTERFACE BETWEEN AMORPHOUS SILICON AND NITRIDE.

C. C. Tsai, R. A. Street, Fernando Ponce, G. B. Anderson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

The structural, compositional and electronic properties of the a-Si:H/a-SiN//x:H interface are reported. High resolution TEM and light/dark ESR studies conclude that the interface has a finite width of the order of 10 Angstrom. In addition, there is a high density of charges residing near the interface. Band bendings occur in both a-Si:H and a-SiN//x:H, resulting in few neutral dangling bonds in the a-Si:H/a-SiN//x:H multilayer structure. The depletion width in the nitride is of the order of 100 Angstrom. The slow decay of the LESR in multilayers with thin sublayers is attributed to charges trapped in the slow states in the nitride.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
Place of PublicationPittsburgh, PA, USA
PublisherMaterials Research Soc
Pages351-359
Number of pages9
Volume70
ISBN (Print)0931837367
StatePublished - 1986
Externally publishedYes

Fingerprint

Amorphous silicon
Nitrides
Multilayers
Dangling bonds
Electronic properties
Paramagnetic resonance
Structural properties
Transmission electron microscopy
silicon nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Tsai, C. C., Street, R. A., Ponce, F., & Anderson, G. B. (1986). PROPERTIES OF THE INTERFACE BETWEEN AMORPHOUS SILICON AND NITRIDE. In Materials Research Society Symposia Proceedings (Vol. 70, pp. 351-359). Pittsburgh, PA, USA: Materials Research Soc.

PROPERTIES OF THE INTERFACE BETWEEN AMORPHOUS SILICON AND NITRIDE. / Tsai, C. C.; Street, R. A.; Ponce, Fernando; Anderson, G. B.

Materials Research Society Symposia Proceedings. Vol. 70 Pittsburgh, PA, USA : Materials Research Soc, 1986. p. 351-359.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tsai, CC, Street, RA, Ponce, F & Anderson, GB 1986, PROPERTIES OF THE INTERFACE BETWEEN AMORPHOUS SILICON AND NITRIDE. in Materials Research Society Symposia Proceedings. vol. 70, Materials Research Soc, Pittsburgh, PA, USA, pp. 351-359.
Tsai CC, Street RA, Ponce F, Anderson GB. PROPERTIES OF THE INTERFACE BETWEEN AMORPHOUS SILICON AND NITRIDE. In Materials Research Society Symposia Proceedings. Vol. 70. Pittsburgh, PA, USA: Materials Research Soc. 1986. p. 351-359
Tsai, C. C. ; Street, R. A. ; Ponce, Fernando ; Anderson, G. B. / PROPERTIES OF THE INTERFACE BETWEEN AMORPHOUS SILICON AND NITRIDE. Materials Research Society Symposia Proceedings. Vol. 70 Pittsburgh, PA, USA : Materials Research Soc, 1986. pp. 351-359
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