PROPERTIES OF THE INTERFACE BETWEEN AMORPHOUS SILICON AND NITRIDE.

C. C. Tsai, R. A. Street, F. A. Ponce, G. B. Anderson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

The structural, compositional and electronic properties of the a-Si:H/a-SiN//x:H interface are reported. High resolution TEM and light/dark ESR studies conclude that the interface has a finite width of the order of 10 Angstrom. In addition, there is a high density of charges residing near the interface. Band bendings occur in both a-Si:H and a-SiN//x:H, resulting in few neutral dangling bonds in the a-Si:H/a-SiN//x:H multilayer structure. The depletion width in the nitride is of the order of 100 Angstrom. The slow decay of the LESR in multilayers with thin sublayers is attributed to charges trapped in the slow states in the nitride.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Pages351-359
Number of pages9
ISBN (Print)0931837367, 9780931837364
DOIs
StatePublished - 1986
Externally publishedYes

Publication series

NameMaterials Research Society Symposia Proceedings
Volume70
ISSN (Print)0272-9172

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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