Abstract
This study presents the results of surface investigation of the heteroepitaxial AlN/SiC interface. The analytical tools employed included UPS, XPS, Auger spectroscopy, and LEED. The surface electronic states were characterized by uv photoemission obtained at surface normal. Conclusions drawn from this study are that the AlN/SiC structure results in a negative electron affinity surface which is extremely sensitive to defect density. The surface Fermi level is found to be near the middle of the AlN gap, and a possible band alignment between the AlN and SiC is presented.
| Original language | English (US) |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Publisher | Materials Research Society |
| Pages | 81-88 |
| Number of pages | 8 |
| Volume | 339 |
| State | Published - 1994 |
| Externally published | Yes |
| Event | Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 4 1994 → Apr 8 1994 |
Other
| Other | Proceedings of the 1994 MRS Spring Meeting |
|---|---|
| City | San Francisco, CA, USA |
| Period | 4/4/94 → 4/8/94 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials