Properties of the heteroepitaxial AlN/SiC interface

M. C. Benjamin, C. Wang, R. S. Kern, R. F. Davis, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

This study presents the results of surface investigation of the heteroepitaxial AlN/SiC interface. The analytical tools employed included UPS, XPS, Auger spectroscopy, and LEED. The surface electronic states were characterized by uv photoemission obtained at surface normal. Conclusions drawn from this study are that the AlN/SiC structure results in a negative electron affinity surface which is extremely sensitive to defect density. The surface Fermi level is found to be near the middle of the AlN gap, and a possible band alignment between the AlN and SiC is presented.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages81-88
Number of pages8
Volume339
StatePublished - 1994
Externally publishedYes
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 4 1994Apr 8 1994

Other

OtherProceedings of the 1994 MRS Spring Meeting
CitySan Francisco, CA, USA
Period4/4/944/8/94

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Properties of the heteroepitaxial AlN/SiC interface'. Together they form a unique fingerprint.

  • Cite this

    Benjamin, M. C., Wang, C., Kern, R. S., Davis, R. F., & Nemanich, R. (1994). Properties of the heteroepitaxial AlN/SiC interface. In Materials Research Society Symposium - Proceedings (Vol. 339, pp. 81-88). Materials Research Society.