Properties of platinum films by liquid-source MOCVD in H
            2 and O
            2

J. Goswami; P. Majhi; C. G. Wang; Sandwip Dey

doi:10.1080/10584580210869

Properties of platinum films by liquid-source MOCVD in H ₂ and O ₂

J. Goswami, P. Majhi, C. G. Wang, Sandwip Dey

Chemical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Chapter

11 Scopus citations

Abstract

A preliminary evaluation of Pt films, deposited at rates of 0.4-7 nm/min by a potentially manufacturable liquid-source MOCVD technique, was carried out with respect to microstructure, step coverage, and electrical properties. The Pt films (12-140 nm) were deposited on various substrates (thermal-SiO ₂/Si, native-oxide/Si, TiN/SiO ₂/Si) via the pyrolysis of trimethyl methyl cyclopentadienyl platinum [(CH ₃) ₃CH ₃CpPt]. The substrate temperature regimes through which Pt deposition occurred, were 175-250°C and 300-450°C in H ₂ and O ₂ ambient, respectively. The growth mechanisms of the Pt films, deposited under H ₂ and O ₂ ambient, were inferred from the observed growth rate, texture evolution, grain size, and estimated nucleation density. Additionally, the step-coverage of Pt deposited on TiN at T _sub of 375°C in O ₂ was 80%. Moreover, the resistivity of a 30 nm Pt film was 22.8 μΩcm.

Original language	English (US)
Title of host publication	Integrated Ferroelectrics
Pages	13-23
Number of pages	11
Volume	42
DOIs	https://doi.org/10.1080/10584580210869
State	Published - 2002

Keywords

Liquid-source
Metalorganic
MOCVD
Platinum
Thin film

ASJC Scopus subject areas

Electrical and Electronic Engineering
Physics and Astronomy (miscellaneous)
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

Access to Document

10.1080/10584580210869

Cite this

@inbook{07b300a75bee4bbc97064a2d02ffe978,

title = "Properties of platinum films by liquid-source MOCVD in H 2 and O 2 ",

abstract = "A preliminary evaluation of Pt films, deposited at rates of 0.4-7 nm/min by a potentially manufacturable liquid-source MOCVD technique, was carried out with respect to microstructure, step coverage, and electrical properties. The Pt films (12-140 nm) were deposited on various substrates (thermal-SiO 2/Si, native-oxide/Si, TiN/SiO 2/Si) via the pyrolysis of trimethyl methyl cyclopentadienyl platinum [(CH 3) 3CH 3CpPt]. The substrate temperature regimes through which Pt deposition occurred, were 175-250°C and 300-450°C in H 2 and O 2 ambient, respectively. The growth mechanisms of the Pt films, deposited under H 2 and O 2 ambient, were inferred from the observed growth rate, texture evolution, grain size, and estimated nucleation density. Additionally, the step-coverage of Pt deposited on TiN at T sub of 375°C in O 2 was 80%. Moreover, the resistivity of a 30 nm Pt film was 22.8 μΩcm.",

keywords = "Liquid-source, Metalorganic, MOCVD, Platinum, Thin film",

author = "J. Goswami and P. Majhi and Wang, {C. G.} and Sandwip Dey",

year = "2002",

doi = "10.1080/10584580210869",

language = "English (US)",

volume = "42",

pages = "13--23",

booktitle = "Integrated Ferroelectrics",

}

TY - CHAP

T1 - Properties of platinum films by liquid-source MOCVD in H 2 and O 2

AU - Goswami, J.

AU - Majhi, P.

AU - Wang, C. G.

AU - Dey, Sandwip

PY - 2002

Y1 - 2002

N2 - A preliminary evaluation of Pt films, deposited at rates of 0.4-7 nm/min by a potentially manufacturable liquid-source MOCVD technique, was carried out with respect to microstructure, step coverage, and electrical properties. The Pt films (12-140 nm) were deposited on various substrates (thermal-SiO 2/Si, native-oxide/Si, TiN/SiO 2/Si) via the pyrolysis of trimethyl methyl cyclopentadienyl platinum [(CH 3) 3CH 3CpPt]. The substrate temperature regimes through which Pt deposition occurred, were 175-250°C and 300-450°C in H 2 and O 2 ambient, respectively. The growth mechanisms of the Pt films, deposited under H 2 and O 2 ambient, were inferred from the observed growth rate, texture evolution, grain size, and estimated nucleation density. Additionally, the step-coverage of Pt deposited on TiN at T sub of 375°C in O 2 was 80%. Moreover, the resistivity of a 30 nm Pt film was 22.8 μΩcm.

AB - A preliminary evaluation of Pt films, deposited at rates of 0.4-7 nm/min by a potentially manufacturable liquid-source MOCVD technique, was carried out with respect to microstructure, step coverage, and electrical properties. The Pt films (12-140 nm) were deposited on various substrates (thermal-SiO 2/Si, native-oxide/Si, TiN/SiO 2/Si) via the pyrolysis of trimethyl methyl cyclopentadienyl platinum [(CH 3) 3CH 3CpPt]. The substrate temperature regimes through which Pt deposition occurred, were 175-250°C and 300-450°C in H 2 and O 2 ambient, respectively. The growth mechanisms of the Pt films, deposited under H 2 and O 2 ambient, were inferred from the observed growth rate, texture evolution, grain size, and estimated nucleation density. Additionally, the step-coverage of Pt deposited on TiN at T sub of 375°C in O 2 was 80%. Moreover, the resistivity of a 30 nm Pt film was 22.8 μΩcm.

KW - Liquid-source

KW - Metalorganic

KW - MOCVD

KW - Platinum

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=0013131153&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0013131153&partnerID=8YFLogxK

U2 - 10.1080/10584580210869

DO - 10.1080/10584580210869

M3 - Chapter

AN - SCOPUS:0013131153

VL - 42

SP - 13

EP - 23

BT - Integrated Ferroelectrics

ER -