Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition

S. Keller, Y. Dora, F. Wu, X. Chen, S. Chowdury, S. P. Denbaars, J. S. Speck, U. K. Mishra

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

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Physics & Astronomy