Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition

S. Keller; Y. Dora; F. Wu; X. Chen; S. Chowdury; S. P. Denbaars; J. S. Speck; U. K. Mishra

doi:10.1063/1.3499428

Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition

S. Keller, Y. Dora, F. Wu, X. Chen, S. Chowdury, S. P. Denbaars, J. S. Speck, U. K. Mishra

Electrical, Computer, and Energy Engineering, School of (IAFSE-ECEE)

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Smooth N-polar GaN films and GaN/AlGaN/GaN heterostructures with properties comparable to Ga-polar GaN-on-silicon films were grown by metal organic chemical vapor deposition on (111) silicon substrates with a misorientation angle of 3.5° toward the [11 2-] direction. For heterostructures with a sheet electron density of 9× 10¹² cm^-2 an electron mobility of 1500 cm²/V s was derived for transport parallel to the surface steps which formed as a result of the substrate misorientation.

Original language	English (US)
Article number	142109
Journal	Applied Physics Letters
Volume	97
Issue number	14
DOIs	https://doi.org/10.1063/1.3499428
State	Published - Oct 4 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3499428

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title = "Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition",

abstract = "Smooth N-polar GaN films and GaN/AlGaN/GaN heterostructures with properties comparable to Ga-polar GaN-on-silicon films were grown by metal organic chemical vapor deposition on (111) silicon substrates with a misorientation angle of 3.5° toward the [11 2-] direction. For heterostructures with a sheet electron density of 9× 1012 cm-2 an electron mobility of 1500 cm2/V s was derived for transport parallel to the surface steps which formed as a result of the substrate misorientation.",

author = "S. Keller and Y. Dora and F. Wu and X. Chen and S. Chowdury and Denbaars, {S. P.} and Speck, {J. S.} and Mishra, {U. K.}",

note = "Funding Information: The authors gratefully acknowledge the support of AFOSR (Dr. K. Reinhardt and Dr. J. Witt) and the ONR-MINE program (Dr. Paul Maki and Dr. Harry Dietrich).",

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T1 - Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition

AU - Keller, S.

AU - Dora, Y.

AU - Wu, F.

AU - Chen, X.

AU - Chowdury, S.

AU - Denbaars, S. P.

AU - Speck, J. S.

AU - Mishra, U. K.

N1 - Funding Information: The authors gratefully acknowledge the support of AFOSR (Dr. K. Reinhardt and Dr. J. Witt) and the ONR-MINE program (Dr. Paul Maki and Dr. Harry Dietrich).

PY - 2010/10/4

Y1 - 2010/10/4

N2 - Smooth N-polar GaN films and GaN/AlGaN/GaN heterostructures with properties comparable to Ga-polar GaN-on-silicon films were grown by metal organic chemical vapor deposition on (111) silicon substrates with a misorientation angle of 3.5° toward the [11 2-] direction. For heterostructures with a sheet electron density of 9× 1012 cm-2 an electron mobility of 1500 cm2/V s was derived for transport parallel to the surface steps which formed as a result of the substrate misorientation.

AB - Smooth N-polar GaN films and GaN/AlGaN/GaN heterostructures with properties comparable to Ga-polar GaN-on-silicon films were grown by metal organic chemical vapor deposition on (111) silicon substrates with a misorientation angle of 3.5° toward the [11 2-] direction. For heterostructures with a sheet electron density of 9× 1012 cm-2 an electron mobility of 1500 cm2/V s was derived for transport parallel to the surface steps which formed as a result of the substrate misorientation.

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Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition

Abstract

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