Smooth N-polar GaN films and GaN/AlGaN/GaN heterostructures with properties comparable to Ga-polar GaN-on-silicon films were grown by metal organic chemical vapor deposition on (111) silicon substrates with a misorientation angle of 3.5° toward the [11 2-] direction. For heterostructures with a sheet electron density of 9× 1012 cm-2 an electron mobility of 1500 cm2/V s was derived for transport parallel to the surface steps which formed as a result of the substrate misorientation.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Oct 4 2010|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)