Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition

S. Keller, Y. Dora, F. Wu, X. Chen, S. Chowdury, S. P. Denbaars, J. S. Speck, U. K. Mishra

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Smooth N-polar GaN films and GaN/AlGaN/GaN heterostructures with properties comparable to Ga-polar GaN-on-silicon films were grown by metal organic chemical vapor deposition on (111) silicon substrates with a misorientation angle of 3.5° toward the [11 2-] direction. For heterostructures with a sheet electron density of 9× 1012 cm-2 an electron mobility of 1500 cm2/V s was derived for transport parallel to the surface steps which formed as a result of the substrate misorientation.

Original languageEnglish (US)
Article number142109
JournalApplied Physics Letters
Volume97
Issue number14
DOIs
StatePublished - Oct 4 2010
Externally publishedYes

Fingerprint

misalignment
metalorganic chemical vapor deposition
silicon
silicon films
electron mobility

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition. / Keller, S.; Dora, Y.; Wu, F.; Chen, X.; Chowdury, S.; Denbaars, S. P.; Speck, J. S.; Mishra, U. K.

In: Applied Physics Letters, Vol. 97, No. 14, 142109, 04.10.2010.

Research output: Contribution to journalArticle

Keller, S, Dora, Y, Wu, F, Chen, X, Chowdury, S, Denbaars, SP, Speck, JS & Mishra, UK 2010, 'Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition', Applied Physics Letters, vol. 97, no. 14, 142109. https://doi.org/10.1063/1.3499428
Keller, S. ; Dora, Y. ; Wu, F. ; Chen, X. ; Chowdury, S. ; Denbaars, S. P. ; Speck, J. S. ; Mishra, U. K. / Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition. In: Applied Physics Letters. 2010 ; Vol. 97, No. 14.
@article{e7158f9ffe2c4ef0a5f9a35c18783ee6,
title = "Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition",
abstract = "Smooth N-polar GaN films and GaN/AlGaN/GaN heterostructures with properties comparable to Ga-polar GaN-on-silicon films were grown by metal organic chemical vapor deposition on (111) silicon substrates with a misorientation angle of 3.5° toward the [11 2-] direction. For heterostructures with a sheet electron density of 9× 1012 cm-2 an electron mobility of 1500 cm2/V s was derived for transport parallel to the surface steps which formed as a result of the substrate misorientation.",
author = "S. Keller and Y. Dora and F. Wu and X. Chen and S. Chowdury and Denbaars, {S. P.} and Speck, {J. S.} and Mishra, {U. K.}",
year = "2010",
month = "10",
day = "4",
doi = "10.1063/1.3499428",
language = "English (US)",
volume = "97",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "14",

}

TY - JOUR

T1 - Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition

AU - Keller, S.

AU - Dora, Y.

AU - Wu, F.

AU - Chen, X.

AU - Chowdury, S.

AU - Denbaars, S. P.

AU - Speck, J. S.

AU - Mishra, U. K.

PY - 2010/10/4

Y1 - 2010/10/4

N2 - Smooth N-polar GaN films and GaN/AlGaN/GaN heterostructures with properties comparable to Ga-polar GaN-on-silicon films were grown by metal organic chemical vapor deposition on (111) silicon substrates with a misorientation angle of 3.5° toward the [11 2-] direction. For heterostructures with a sheet electron density of 9× 1012 cm-2 an electron mobility of 1500 cm2/V s was derived for transport parallel to the surface steps which formed as a result of the substrate misorientation.

AB - Smooth N-polar GaN films and GaN/AlGaN/GaN heterostructures with properties comparable to Ga-polar GaN-on-silicon films were grown by metal organic chemical vapor deposition on (111) silicon substrates with a misorientation angle of 3.5° toward the [11 2-] direction. For heterostructures with a sheet electron density of 9× 1012 cm-2 an electron mobility of 1500 cm2/V s was derived for transport parallel to the surface steps which formed as a result of the substrate misorientation.

UR - http://www.scopus.com/inward/record.url?scp=77958026602&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77958026602&partnerID=8YFLogxK

U2 - 10.1063/1.3499428

DO - 10.1063/1.3499428

M3 - Article

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

M1 - 142109

ER -