Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition

S. Keller, Y. Dora, F. Wu, X. Chen, S. Chowdury, S. P. Denbaars, J. S. Speck, U. K. Mishra

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Smooth N-polar GaN films and GaN/AlGaN/GaN heterostructures with properties comparable to Ga-polar GaN-on-silicon films were grown by metal organic chemical vapor deposition on (111) silicon substrates with a misorientation angle of 3.5° toward the [11 2-] direction. For heterostructures with a sheet electron density of 9× 1012 cm-2 an electron mobility of 1500 cm2/V s was derived for transport parallel to the surface steps which formed as a result of the substrate misorientation.

Original languageEnglish (US)
Article number142109
JournalApplied Physics Letters
Volume97
Issue number14
DOIs
StatePublished - Oct 4 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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