Properties of hydrogenated indium oxide prepared by reactive sputtering with hydrogen gas

Mathieu Boccard, Nathan Rodkey, Zachary Holman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We investigate the possibility of fabricating high- mobility hydrogen-doped indium oxide (IO:H) using gaseous hydrogen instead of water vapor during sputtering. A sputtering tool equipped with a residual gas analyzer allows us to monitor the partial pressure of H2, O2 and H2O in the system, and to link the gas composition to the properties of the deposited films. Films with mobilities as high as 90 cm2/Vs and carrier densities of 2.1020 cm-3 (after annealing) were obtained when low hydrogen content was introduced (partial pressure of 4.10-6 mbar) together with argon and oxygen. Increasing the content of hydrogen prove detrimental to the transparency of the film as well as to the electrical properties, as well as the absence of hydrogen.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-3
Number of pages3
ISBN (Electronic)9781509056057
DOIs
StatePublished - May 25 2018
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017Jun 30 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period6/25/176/30/17

Keywords

  • Hydrogen
  • Indium oxide
  • Mobility
  • Transparent conductive oxide

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Boccard, M., Rodkey, N., & Holman, Z. (2018). Properties of hydrogenated indium oxide prepared by reactive sputtering with hydrogen gas. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-3). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366672