Properties of hydrogenated indium oxide prepared by reactive sputtering with hydrogen gas

Mathieu Boccard; Nathan Rodkey; Zachary Holman

doi:10.1109/PVSC.2016.7750178

Properties of hydrogenated indium oxide prepared by reactive sputtering with hydrogen gas

Mathieu Boccard, Nathan Rodkey, Zachary Holman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

We investigate the possibility of fabricating high-mobility hydrogen-doped indium oxide (IO:H) using gaseous hydrogen instead of water vapor during sputtering. A sputtering tool equipped with a residual gas analyzer allows us to monitor the partial pressure of H₂, O₂ and H₂O in the system, and to link the gas composition to the properties of the deposited films. Films with mobilities as high as 90 cm²/Vs and carrier densities of 2.10²⁰ cm^-3 (after annealing) were obtained when low hydrogen content was introduced (partial pressure of 4.10^-6 mbar) together with argon and oxygen. Increasing the content of hydrogen prove detrimental to the transparency of the film as well as to the electrical properties, as well as the absence of hydrogen.

Original language	English (US)
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2868-2870
Number of pages	3
Volume	2016-November
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7750178
State	Published - Nov 18 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016

Other

Other	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country	United States
City	Portland
Period	6/5/16 → 6/10/16

Keywords

hydrogen
indium oxide
mobility
transparent conductive oxide

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2016.7750178

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Cite this

Boccard, M., Rodkey, N., & Holman, Z. (2016). Properties of hydrogenated indium oxide prepared by reactive sputtering with hydrogen gas. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 2868-2870). [7750178] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7750178

Properties of hydrogenated indium oxide prepared by reactive sputtering with hydrogen gas. / Boccard, Mathieu; Rodkey, Nathan; Holman, Zachary.

2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 2868-2870 7750178.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Boccard, M, Rodkey, N & Holman, Z 2016, Properties of hydrogenated indium oxide prepared by reactive sputtering with hydrogen gas. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7750178, Institute of Electrical and Electronics Engineers Inc., pp. 2868-2870, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7750178

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