TY - GEN
T1 - Properties of hydrogenated indium oxide prepared by reactive sputtering with hydrogen gas
AU - Boccard, Mathieu
AU - Rodkey, Nathan
AU - Holman, Zachary
N1 - Funding Information:
We acknowledge Reto Tscharner, Xavier Niquille and Sylvain Dunand for helpful discussions in refurbishing the sputtering tool. We also thank Prateek Garg and Peter Firth for the H2 control and Alec Jackson for RGA support. The information, data, or work presented herein was funded in part by the U.S. Department of Energy, Energy Efficiency and Renewable Energy Program, under Award Number DEEE0006335. This material is also based upon work supported in part by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC-1041895
Publisher Copyright:
© 2016 IEEE.
PY - 2016/11/18
Y1 - 2016/11/18
N2 - We investigate the possibility of fabricating high-mobility hydrogen-doped indium oxide (IO:H) using gaseous hydrogen instead of water vapor during sputtering. A sputtering tool equipped with a residual gas analyzer allows us to monitor the partial pressure of H2, O2 and H2O in the system, and to link the gas composition to the properties of the deposited films. Films with mobilities as high as 90 cm2/Vs and carrier densities of 2.1020 cm-3 (after annealing) were obtained when low hydrogen content was introduced (partial pressure of 4.10-6 mbar) together with argon and oxygen. Increasing the content of hydrogen prove detrimental to the transparency of the film as well as to the electrical properties, as well as the absence of hydrogen.
AB - We investigate the possibility of fabricating high-mobility hydrogen-doped indium oxide (IO:H) using gaseous hydrogen instead of water vapor during sputtering. A sputtering tool equipped with a residual gas analyzer allows us to monitor the partial pressure of H2, O2 and H2O in the system, and to link the gas composition to the properties of the deposited films. Films with mobilities as high as 90 cm2/Vs and carrier densities of 2.1020 cm-3 (after annealing) were obtained when low hydrogen content was introduced (partial pressure of 4.10-6 mbar) together with argon and oxygen. Increasing the content of hydrogen prove detrimental to the transparency of the film as well as to the electrical properties, as well as the absence of hydrogen.
KW - hydrogen
KW - indium oxide
KW - mobility
KW - transparent conductive oxide
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U2 - 10.1109/PVSC.2016.7750178
DO - 10.1109/PVSC.2016.7750178
M3 - Conference contribution
AN - SCOPUS:85003608941
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 2868
EP - 2870
BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Y2 - 5 June 2016 through 10 June 2016
ER -