Abstract
We investigate the possibility of fabricating high-mobility hydrogen-doped indium oxide (IO:H) using gaseous hydrogen instead of water vapor during sputtering. A sputtering tool equipped with a residual gas analyzer allows us to monitor the partial pressure of H2, O2 and H2O in the system, and to link the gas composition to the properties of the deposited films. Films with mobilities as high as 90 cm2/Vs and carrier densities of 2.1020 cm-3 (after annealing) were obtained when low hydrogen content was introduced (partial pressure of 4.10-6 mbar) together with argon and oxygen. Increasing the content of hydrogen prove detrimental to the transparency of the film as well as to the electrical properties, as well as the absence of hydrogen.
| Original language | English (US) |
|---|---|
| Title of host publication | 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 2868-2870 |
| Number of pages | 3 |
| Volume | 2016-November |
| ISBN (Electronic) | 9781509027248 |
| DOIs | |
| State | Published - Nov 18 2016 |
| Event | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016 |
Other
| Other | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 |
|---|---|
| Country | United States |
| City | Portland |
| Period | 6/5/16 → 6/10/16 |
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Keywords
- hydrogen
- indium oxide
- mobility
- transparent conductive oxide
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering
Cite this
Properties of hydrogenated indium oxide prepared by reactive sputtering with hydrogen gas. / Boccard, Mathieu; Rodkey, Nathan; Holman, Zachary.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 2868-2870 7750178.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Properties of hydrogenated indium oxide prepared by reactive sputtering with hydrogen gas
AU - Boccard, Mathieu
AU - Rodkey, Nathan
AU - Holman, Zachary
PY - 2016/11/18
Y1 - 2016/11/18
N2 - We investigate the possibility of fabricating high-mobility hydrogen-doped indium oxide (IO:H) using gaseous hydrogen instead of water vapor during sputtering. A sputtering tool equipped with a residual gas analyzer allows us to monitor the partial pressure of H2, O2 and H2O in the system, and to link the gas composition to the properties of the deposited films. Films with mobilities as high as 90 cm2/Vs and carrier densities of 2.1020 cm-3 (after annealing) were obtained when low hydrogen content was introduced (partial pressure of 4.10-6 mbar) together with argon and oxygen. Increasing the content of hydrogen prove detrimental to the transparency of the film as well as to the electrical properties, as well as the absence of hydrogen.
AB - We investigate the possibility of fabricating high-mobility hydrogen-doped indium oxide (IO:H) using gaseous hydrogen instead of water vapor during sputtering. A sputtering tool equipped with a residual gas analyzer allows us to monitor the partial pressure of H2, O2 and H2O in the system, and to link the gas composition to the properties of the deposited films. Films with mobilities as high as 90 cm2/Vs and carrier densities of 2.1020 cm-3 (after annealing) were obtained when low hydrogen content was introduced (partial pressure of 4.10-6 mbar) together with argon and oxygen. Increasing the content of hydrogen prove detrimental to the transparency of the film as well as to the electrical properties, as well as the absence of hydrogen.
KW - hydrogen
KW - indium oxide
KW - mobility
KW - transparent conductive oxide
UR - http://www.scopus.com/inward/record.url?scp=85003608941&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85003608941&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2016.7750178
DO - 10.1109/PVSC.2016.7750178
M3 - Conference contribution
AN - SCOPUS:85003608941
VL - 2016-November
SP - 2868
EP - 2870
BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
ER -