Properties of hydrogenated indium oxide prepared by reactive sputtering with hydrogen gas

Mathieu Boccard, Nathan Rodkey, Zachary Holman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We investigate the possibility of fabricating high-mobility hydrogen-doped indium oxide (IO:H) using gaseous hydrogen instead of water vapor during sputtering. A sputtering tool equipped with a residual gas analyzer allows us to monitor the partial pressure of H2, O2 and H2O in the system, and to link the gas composition to the properties of the deposited films. Films with mobilities as high as 90 cm2/Vs and carrier densities of 2.1020 cm-3 (after annealing) were obtained when low hydrogen content was introduced (partial pressure of 4.10-6 mbar) together with argon and oxygen. Increasing the content of hydrogen prove detrimental to the transparency of the film as well as to the electrical properties, as well as the absence of hydrogen.

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2868-2870
Number of pages3
Volume2016-November
ISBN (Electronic)9781509027248
DOIs
StatePublished - Nov 18 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period6/5/166/10/16

Fingerprint

Reactive sputtering
Indium
Hydrogen
Oxides
Gases
Partial pressure
Sputtering
Transparency
Water vapor
Carrier concentration
Argon
Electric properties
Annealing
Oxygen
Chemical analysis

Keywords

  • hydrogen
  • indium oxide
  • mobility
  • transparent conductive oxide

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Boccard, M., Rodkey, N., & Holman, Z. (2016). Properties of hydrogenated indium oxide prepared by reactive sputtering with hydrogen gas. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 2868-2870). [7750178] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7750178

Properties of hydrogenated indium oxide prepared by reactive sputtering with hydrogen gas. / Boccard, Mathieu; Rodkey, Nathan; Holman, Zachary.

2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 2868-2870 7750178.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Boccard, M, Rodkey, N & Holman, Z 2016, Properties of hydrogenated indium oxide prepared by reactive sputtering with hydrogen gas. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7750178, Institute of Electrical and Electronics Engineers Inc., pp. 2868-2870, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7750178
Boccard M, Rodkey N, Holman Z. Properties of hydrogenated indium oxide prepared by reactive sputtering with hydrogen gas. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November. Institute of Electrical and Electronics Engineers Inc. 2016. p. 2868-2870. 7750178 https://doi.org/10.1109/PVSC.2016.7750178
Boccard, Mathieu ; Rodkey, Nathan ; Holman, Zachary. / Properties of hydrogenated indium oxide prepared by reactive sputtering with hydrogen gas. 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. pp. 2868-2870
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